Characterization of line-edge roughness in Cu/low-k interconnect pattern

Atsuko Yamaguchi; Daisuke Ryuzaki; Jiro Yamamoto; Hiroki Kawada; Takashi Iizumi

doi:10.1117/12.710401

5 April 2007 Characterization of line-edge roughness in Cu/low-k interconnect pattern

Atsuko Yamaguchi, Daisuke Ryuzaki, Jiro Yamamoto, Hiroki Kawada, Takashi Iizumi

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 65181P (2007) https://doi.org/10.1117/12.710401
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

To establish a method for measuring interconnect line-edge roughness (LER), low-k line patterns were observed and electric-field concentration was simulated based on the observation results. Wedges were observed on the edges, and the bottom and the top widths of the average wedge feature were 60 nm and 7 nm (or smaller), respectively. Simulation showed that the LER causes serious degradation of TDDB immunity at 100-nm-pitch Cu/low-k interconnects. The maximum electric-field intensity depends upon the conventional LER metric, 3R_q, but depends more strongly on the wedge angle, the curvature of the tip, and the minimum linewidth.

Citation Download Citation

Atsuko Yamaguchi, Daisuke Ryuzaki, Jiro Yamamoto, Hiroki Kawada, and Takashi Iizumi "Characterization of line-edge roughness in Cu/low-k interconnect pattern", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65181P (5 April 2007); https://doi.org/10.1117/12.710401

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