Overlay metrology for dark hard mask process: simulation and experiment study

Jangho Shin; Roman Chalykh; Hyunjae Kang; SeongSue Kim; SukJoo Lee; Han-Ku Cho

doi:10.1117/12.711389

5 April 2007 Overlay metrology for dark hard mask process: simulation and experiment study

Jangho Shin, Roman Chalykh, Hyunjae Kang, SeongSue Kim, SukJoo Lee, Han-Ku Cho

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 65182U (2007) https://doi.org/10.1117/12.711389
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Simulation and experimental study results are reported to solve align/overlay problem in dark hard mask process in lithography. For simulation part, an in-house simulator, which is based on rigorous coupled wave analysis and Fourier optics method of high NA imaging, is used. According to the simulation and experiment study, image quality of alignment and overlay marks can be optimized by choosing hard mask and sub-film thickness carefully for a given process condition. In addition, it is important to keep the specification of film thickness uniformity within a certain limit. Simulation results are confirmed by experiment using the state of art memory process in Samsung semiconductor R&D facility.

Citation Download Citation

Jangho Shin, Roman Chalykh, Hyunjae Kang, SeongSue Kim, SukJoo Lee, and Han-Ku Cho "Overlay metrology for dark hard mask process: simulation and experiment study", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65182U (5 April 2007); https://doi.org/10.1117/12.711389

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KEYWORDS

Photomasks

Overlay metrology

Semiconducting wafers

Optical alignment

Image processing

Photoresist materials

Image quality

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