Use of in-line AFM as LWR verification tool in 45nm process development

Ming Hsun Hsieh; Kun Ho Shi; J. H. Yeh; Ruei Hung Hsu; Mingsheng Tsai; S. F. Tzou

doi:10.1117/12.712537

5 April 2007 Use of in-line AFM as LWR verification tool in 45nm process development

Ming Hsun Hsieh, Kun Ho Shi, J. H. Yeh, Ruei Hung Hsu, Mingsheng Tsai, S. F. Tzou

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 651833 (2007) https://doi.org/10.1117/12.712537
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

As critical dimensions shrink to fit advanced process generation requirements, line width roughness (LWR) has become more and more important. As design rules for semiconductor devices shrink, the line width roughness approaches the CD of the line itself. This leads to poor device performance or even device failure. Thus, an accurate process monitor for LWR is required. CD-SEM measurements for LWR require a reference to verify the accuracy. TEM has traditionally played this role. However, its destructive nature, the errors induced by sample preparation, the limited data output and long turnaround time make routine TEM measurement undesirable. CD-AFM is a non-destructive technique that is able to generate highly accurate three-dimensional profiles of a sample surface over tens of microns in the X and Y directions with sub-nanometer resolution. In this paper we present results that show strong correlation between CD-SEM, TEM and inline CD-AFM based on measurements of an OPC grating. Based on these results, CD-AFM has successfully replaced TEM as the reference tool of choice for the R&D stage of a 45nm generation process. To improve this situation, we have successfully adopted in-line X3D AFM to replace FA TEM as the verification tool in the R&D stage of a 45nm generation process.

Citation Download Citation

Ming Hsun Hsieh, Kun Ho Shi, J. H. Yeh, Ruei Hung Hsu, Mingsheng Tsai, and S. F. Tzou "Use of in-line AFM as LWR verification tool in 45nm process development", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 651833 (5 April 2007); https://doi.org/10.1117/12.712537

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KEYWORDS

Critical dimension metrology

Line width roughness

Transmission electron microscopy

Atomic force microscopy

Optical proximity correction

Error analysis

Nondestructive evaluation

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