Accurate and reliable optical CD of MuGFET down to 10nm

P. Leray; G. F. Lorusso; S. Cheng; N. Collaert; M. Jurczak; S. Shirke

doi:10.1117/12.713324

5 April 2007 Accurate and reliable optical CD of MuGFET down to 10nm

P. Leray, G. F. Lorusso, S. Cheng, N. Collaert, M. Jurczak, S. Shirke

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 65183B (2007) https://doi.org/10.1117/12.713324
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

As device critical dimensions (CD) decrease, they approach the limits of standard metrology techniques and measuring features smaller than 20 nm represents a serious challenge. Within the framework of the 32 nm program at IMEC, a reliable and accurate approach to small feature metrology is required. We describe here a methodology aimed at measuring features down to 10nm by means of scatterometry. The results are compared to calibrated CDSEM measurements [1]. The active fins of a Multi Gate Field Effect Transistors (MuGFET) was measured across wafer and across batch. Scribe to cell correlation, wafer fingerprint, 3D profile, oxide thickness were also investigated. In particular, 3D profile information was compared to TEM. Our approach produced very consistent results for all measurement techniques (scatterometry, CDSEM and TEM) and it is now fully integrated in the IMEC production line to monitor the MuGFET platform.

Citation Download Citation

P. Leray, G. F. Lorusso, S. Cheng, N. Collaert, M. Jurczak, and S. Shirke "Accurate and reliable optical CD of MuGFET down to 10nm", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65183B (5 April 2007); https://doi.org/10.1117/12.713324

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