Optimization of lithography process to improve image deformation of contact hole sub-90 nm technology node

Sungho Jun; Juhyun Kim; Eunsoo Jeong; Youngje Yun; Jaehee Kim; Keeho Kim

doi:10.1117/12.711978

5 April 2007 Optimization of lithography process to improve image deformation of contact hole sub-90 nm technology node

Sungho Jun, Juhyun Kim, Eunsoo Jeong, Youngje Yun, Jaehee Kim, Keeho Kim

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 65183T (2007) https://doi.org/10.1117/12.711978
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

In resolution limited lithography process, the image deformation is getting severer. This is very important area where we need to fully understand and improved since the image deformation is directly giving poor CD control effect. Especially, contact hole image will be more sensitive since it has lower k1 factor that line and spaced pattern. This image deformation of contact hole can give some severe electrical fail due to not opened contact. In our case, we observed some critical failure mode of diagonal induced by abnormal contact hole shape of rough edge. In this paper, we investigate how deformed contact hole image impacted on degradation of device performance in electrical properties and yield and how we can improve it. To quantitatively analyze image deformation of contact hole, we recommend new measurement method first. This new measurement gives exact image deformation amount at different experimental conditions. Finally, we will show how experimental conditions such as soft bake temperature, post expose bake temperature, hardening bake temperature, illumination condition and mask bias change image deformation of contact hole.

Citation Download Citation

Sungho Jun, Juhyun Kim, Eunsoo Jeong, Youngje Yun, Jaehee Kim, and Keeho Kim "Optimization of lithography process to improve image deformation of contact hole sub-90 nm technology node", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65183T (5 April 2007); https://doi.org/10.1117/12.711978

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