Paper
5 April 2007 Phame: a novel phase metrology tool of Carl Zeiss for in-die phase measurements under scanner relevant optical settings
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Abstract
Meeting the demands of the lithography mask manufacturing industry moving toward 45nm and 32nm node for in-die phase metrology on phase shifting masks, Zeiss is currently developing an optical phase measurement tool (PhameTM), providing the capability of extending process control from large CD test features to in-die phase shifting features with high spatial resolution. In collaboration with Intel, the necessity of designing this optical metrology tool according to the optical setup of a lithographic exposure tool (scanner) has been researched to be fundamental for the acquisition of phase information generated from features the size of the used wavelength. Main cause is the dependence of the image phase of a scanner on polarization and the angle of incidence of the illumination light due to rigorous effects, and on the imaging NA of the scanner due to the loss of phase information in the imaging pupil. The resulting scanner phase in the image plane only coincides with the etch-depth equivalent phase for large test features, exceeding the size of the in-die feature by an order of magnitude. In this paper we introduce the PhameTM phase metrology tool, using a 193nm light source with the optical capability of phase measurement at scanner NA up to the equivalent of a NA1.6 immersion scanner, under varying, scanner relevant angle of incidence for EAPSMs and CPLs, and with the possibility of polarizing the illuminating light. New options for phase shifting mask process control on in-die features will be outlined with first measurement results.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sascha Perlitz, Ute Buttgereit, and Thomas Scherübl "Phame: a novel phase metrology tool of Carl Zeiss for in-die phase measurements under scanner relevant optical settings", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184R (5 April 2007); https://doi.org/10.1117/12.712813
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CITATIONS
Cited by 4 scholarly publications and 5 patents.
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KEYWORDS
Scanners

Photomasks

Phase measurement

Etching

Metrology

Semiconducting wafers

Phase shifting

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