Second-generation radiation sensitive developable bottom anti-reflective coatings (DBARC) and implant resists approaches for 193-nm lithography

Francis Houlihan; Alberto Dioses; Medhat Toukhy; Andrew Romano; Joseph Oberlander; HengPeng Wu; Salem Mullen; Alexandra Krawicz; PingHung Lu; Mark Neisser

doi:10.1117/12.713436

2 April 2007 Second-generation radiation sensitive developable bottom anti-reflective coatings (DBARC) and implant resists approaches for 193-nm lithography

Francis Houlihan, Alberto Dioses, Medhat Toukhy, Andrew Romano, Joseph Oberlander, HengPeng Wu, Salem Mullen, Alexandra Krawicz, PingHung Lu, Mark Neisser

Author Affiliations +

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65190L (2007) https://doi.org/10.1117/12.713436
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

We will discuss our approach towards a second generation radiation sensitive developable bottom antireflective coating (DBARC's) for 193 nm. We will show imaging results (1:1 L/S features down to 140 nm) for some first generation implant resist material based upon a fluorinated resins and also show relative implant resistance of these first generation fluorinated resists towards As implantation (15 KeV at 5x10¹⁵ dose with 20 x 10^-4amp). Also, discussed will be a second generation of implant resists based on a non-fluorinated resins. Surprisingly, we found that the nonfluorinated materials gave better implant resistance (~2-3 X10¹¹atoms/cm²) despite the higher atomic number of fluorine compared to hydrogen in the fluorinated implant materials (~2-5X10¹² atoms/cm²). Finally, we will give an update on the lithographic performance of this second generation of implant resists.

Citation Download Citation

Francis Houlihan, Alberto Dioses, Medhat Toukhy, Andrew Romano, Joseph Oberlander, HengPeng Wu, Salem Mullen, Alexandra Krawicz, PingHung Lu, and Mark Neisser "Second-generation radiation sensitive developable bottom anti-reflective coatings (DBARC) and implant resists approaches for 193-nm lithography", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65190L (2 April 2007); https://doi.org/10.1117/12.713436

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