Impact of airborne NH3 and humidity against wafer-to-wafer CD variation in ArF lithography through 45-nm technology node

Ryoichiro Naito; Yoshitaka Matsuda; Masaharu Shioguchi; Tsuyoshi Shibata

doi:10.1117/12.711334

2 April 2007 Impact of airborne NH3 and humidity against wafer-to-wafer CD variation in ArF lithography through 45-nm technology node

Ryoichiro Naito, Yoshitaka Matsuda, Masaharu Shioguchi, Tsuyoshi Shibata

Author Affiliations +

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65193D (2007) https://doi.org/10.1117/12.711334
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

An impact of air-borne NH3 and humidity against a wafer-to-wafer (WTW) CD variation is investigated. An environmental stability of ArF resist materials is also investigated through the design of experiment (DOE) analysis, where the different resist formulations are chosen as variation factors. Assuming the most environmentally sensitive ArF resist material used in the 45nm 1:1 LS pattern imaging (worst case scenario), the WTW CD variations caused by air-borne NH3 and humidity fluctuations are estimated to be 0.10nm and 0.29nm, respectively.

Citation Download Citation

Ryoichiro Naito, Yoshitaka Matsuda, Masaharu Shioguchi, and Tsuyoshi Shibata "Impact of airborne NH3 and humidity against wafer-to-wafer CD variation in ArF lithography through 45-nm technology node", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193D (2 April 2007); https://doi.org/10.1117/12.711334

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