A solution for exposure tool optimization at the 65-nm node and beyond

Daisuke Itai

doi:10.1117/12.711355

26 March 2007 A solution for exposure tool optimization at the 65-nm node and beyond

Daisuke Itai

Proceedings Volume 6520, Optical Microlithography XX; 65200Q (2007) https://doi.org/10.1117/12.711355
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

As device geometries shrink, tolerances for critical dimension, focus, and overlay control decrease. For the stable manufacture of semiconductor devices at (and beyond) the 65nm node, both performance variability and drift in exposure tools are no longer negligible factors. With EES (Equipment Engineering System) as a guidepost, hopes of improving productivity of semiconductor manufacturing are growing. We are developing a system, EESP (Equipment Engineering Support Program), based on the concept of EES. The EESP system collects and stores large volumes of detailed data generated from Canon lithographic equipment while product is being manufactured. It uses that data to monitor both equipment characteristics and process characteristics, which cannot be examined without this system. The goal of EESP is to maximize equipment capabilities, by feeding the result back to APC/FDC and the equipment maintenance list. This was a collaborative study of the system's effectiveness at the device maker's factories. We analyzed the performance variability of exposure tools by using focus residual data. We also attempted to optimize tool performance using the analyzed results. The EESP system can make the optimum performance of exposure tools available to the device maker.

Citation Download Citation

Daisuke Itai "A solution for exposure tool optimization at the 65-nm node and beyond", Proc. SPIE 6520, Optical Microlithography XX, 65200Q (26 March 2007); https://doi.org/10.1117/12.711355

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