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27 March 2007 Demonstration of sub-45-nm features using azimuthal polarization on a 1.30NA immersion microstepper
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Abstract
The practical extendibility of immersion lithography to the 45nm half-pitch is being investigated on a 1.30NA immersion projection microstepper installed at SEMATECH North in Albany, New York. Preliminary implementation of various aperture designs and polarization configurations have been used to demonstrate imaging beyond the 90nm pitch. Optical proximity correction (OPC) and other resolution enhancement technique (RET) strategies coupled with resist stack optimization of dual-layer bottom anti-reflective coating (BARC) systems offer a growing platform of materials and illumination configurations for the 45nm node. In this demonstration of a RET strategy, linear-polarized light is selectively rotated at the coherence aperture to simultaneously image sub-90nm pitch features along the x and y axes within the same field. Scanning electron microscope (SEM) images demonstrate the capability of the immersion micro-exposure tool (iMET) to support dual-orientation imaging with resolution down to the 84nm pitch.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emil C. Piscani, Shane Palmer, and Chris Van Peski "Demonstration of sub-45-nm features using azimuthal polarization on a 1.30NA immersion microstepper", Proc. SPIE 6520, Optical Microlithography XX, 652025 (27 March 2007); https://doi.org/10.1117/12.720863
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