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27 March 2007 Optical performance enhancement technique for 45-nm-node with binary mask
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Abstract
As the pattern half pitch on the mask gets shorter than the wavelength by smaller device design rule, 3-D effect of the mask pattern topology becomes greater. The resolution approaches to that of the attenuated Phase Shift Mask (attPSM), when pattern size is smaller than 45 nm node. The binary mask was therefore selected due to the simple fabrication process and the advantage with no-haze, and its performance was evaluated both numerically and experimentally by newly designing the mask structure that may have mask immersion effects. This new mask can be made by depositing transparent oxide materials on a conventional patterned binary mask. When the change of NILS (Normalized Image Log Slope) was checked quantitatively according to duty ratio and oxide thickness, the NILS increased more than 10% on the average from the simulation and about 10-30% from the experiment, when compared with the binary mask. In other words, the mask structure with the transparent oxide layer improves the NILS and has the advantage in the DOF margin. Since only the deposition process is required after the binary mask is made, the manufacturing is relatively simple.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin-Sik Jung, Hee-Bom Kim, Jeung-Woo Lee, Sung-Woon Choi, and Woo-Sung Han "Optical performance enhancement technique for 45-nm-node with binary mask", Proc. SPIE 6520, Optical Microlithography XX, 652026 (27 March 2007); https://doi.org/10.1117/12.711328
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