Paper
26 March 2007 Illumination optimization with actual information of exposure tool and resist process
Koichiro Tsujita, Koji Mikami, Ryotaro Naka, Norikazu Baba, Tomomi Ono, Akiyoshi Suzuki
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Abstract
A solution tool to optimize exposure tool functions has been developed. Shown are examples of pattern matching, maximizing ED-window or NILS considering several patterns simultaneously, and so on. From these results, the following conclusions have been derived. Pattern matching whose accuracy less than 1nm can be attained flexibly by tuning illumination. Ideal illumination for hole patterns through pitches are shown and the results are sensitive to setting of exposure latitude of ED-window. Evaluation conditions such as evaluated locations and their numbers have impact on the optimization results. An optimized illumination of a device pattern varies according to k1 factor. And it is important to apply OPC during illumination optimization in case of optimizing several patterns. A model of resist simulation created by an exposure condition should be available for various exposure conditions during optimization. For this purpose an image log slope and a pattern curvature have strong impact among various characteristics of optical image.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koichiro Tsujita, Koji Mikami, Ryotaro Naka, Norikazu Baba, Tomomi Ono, and Akiyoshi Suzuki "Illumination optimization with actual information of exposure tool and resist process", Proc. SPIE 6520, Optical Microlithography XX, 652036 (26 March 2007); https://doi.org/10.1117/12.711048
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CITATIONS
Cited by 2 scholarly publications and 1 patent.
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KEYWORDS
Nanoimprint lithography

Optical proximity correction

Photomasks

Optical simulations

Optimization (mathematics)

Electroluminescence

Binary data

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