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27 March 2007 Virtual OPC at hyper NA lithography
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Abstract
Virtual OPC concept is suggested for soothing the problem that the roadmap of semiconductor devices proceeds the rate of development of exposure tools. Virtual OPC uses the simulated CD data for an OPC modeling instead of the measured CD data. For successful virtual OPC, the extreme accuracy of the simulation is required for obtaining the simulated CD data close to the actual CD values. In this paper, our efforts to enhance the simulation accuracy are presented and the accuracy of simulated sample data for OPC is verified. The applicability of virtual OPC to the production of devices was verified by performing the virtual OPC using the simulated sample data at 1.2 NA lithography and the result also is presented.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sook Lee, Sang-Wook Kim, Yong-Jin Chun, Sung-Soo Suh, Yun-Kyeong Jang, Suk-Joo Lee, Sung-Woon Choi, and Woo-Sung Han "Virtual OPC at hyper NA lithography", Proc. SPIE 6520, Optical Microlithography XX, 65203X (27 March 2007); https://doi.org/10.1117/12.711827
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