Paper
21 March 2007 Scanner-characteristics-aware OPC modeling and correction
Author Affiliations +
Abstract
As scanner projection lens captures only a finite number of IC pattern diffraction orders. This low pass filtering leads to a range of optical proximity effects such as pitch-dependent CD variations, corner rounding and line-end pullback, resulting in imaged IC pattern excursions from the intended designs. These predictable OPEs are driven by the imaging conditions, such as wavelength, illuminator layout, reticle technology, and lens numerical aperture. To mitigate the pattern excursion due to OPEs, the photolithography community developed optical proximity correction methodologies, adopted and refined by the EDA industry. In the current implementations, OPC applied to IC designs can correct layouts to compensate for OPEs and to provide imaged patterns meeting the design requirements.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jacek K. Tyminski, Qiaolin Zhang, Kevin Lucas, Laurent Depre, and Paul VanAdrichem "Scanner-characteristics-aware OPC modeling and correction", Proc. SPIE 6521, Design for Manufacturability through Design-Process Integration, 65210Z (21 March 2007); https://doi.org/10.1117/12.711624
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Optical proximity correction

Scanners

Critical dimension metrology

Fiber optic illuminators

Error analysis

Performance modeling

Reticles

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