Paper
3 May 2007 Investigation on immersion defectivity root cause
V. Farys, S. Gaugiran, D. Cruau, K. Mestadi, S. Warrick, M. Benndorf, R. Feilleux, C. Sourd
Author Affiliations +
Proceedings Volume 6533, 23rd European Mask and Lithography Conference; 653308 (2007) https://doi.org/10.1117/12.736328
Event: European Mask and Lithography Conference2007, 2007, Grenoble, France
Abstract
The introduction of immersion lithography in the production phase has been accompanied with high level of defects compared to standard process on dry lithography. Continuous process optimization allowed us to reduce the defectivity to dry lithography level. This learning cycle also permitted to improve our knowledge on immersion defectivity formation. Immersion lithography process cause specific defects type as watermarks, bubbles, extra pattern and swelling of lines. We will report in this article on our latest experiment on the understanding of defects formation during immersion process. The influence of the track and scanner parameters has been investigated as well as materials issue (resist, topcoat). Measurements of leaching, receding contact angle and water uptake have been performed in order to correlate with defect formation. It appears that material, track and scanner parameters play different role on the formation of specific immersion defects.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Farys, S. Gaugiran, D. Cruau, K. Mestadi, S. Warrick, M. Benndorf, R. Feilleux, and C. Sourd "Investigation on immersion defectivity root cause", Proc. SPIE 6533, 23rd European Mask and Lithography Conference, 653308 (3 May 2007); https://doi.org/10.1117/12.736328
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KEYWORDS
Thin film coatings

Scanners

Semiconducting wafers

Digital watermarking

Inspection

Immersion lithography

Lithography

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