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3 May 2007 Actinic inspection of sub-50 nm EUV mask blank defects
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Proceedings Volume 6533, 23rd European Mask and Lithography Conference; 65331R (2007)
Event: European Mask and Lithography Conference2007, 2007, Grenoble, France
A new actinic mask inspection technology to probe nano-scaled defects buried underneath a Mo/Si multilayer reflection coating of an Extreme Ultraviolet Lithography mask blank has been implemented using EUV Photoemission Electron Microscopy (EUV-PEEM). EUV PEEM images of programmed defect structures of various lateral and vertical sizes recorded at around 13 nm wavelength show that 35 nm wide and 4 nm high buried line defects are clearly detectable. The imaging technique proves to be sensitive to small phase jumps enhancing the visibility of the edges of the phase defects which is explained in terms of a standing wave enhanced image contrast at resonant EUV illumination.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingquan Lin, Nils Weber, Jochen Maul, Stefan Hendel, Karsten Rott, Michael Merkel, Gerd Schoenhense, and Ulf Kleineberg "Actinic inspection of sub-50 nm EUV mask blank defects", Proc. SPIE 6533, 23rd European Mask and Lithography Conference, 65331R (3 May 2007);


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