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15 May 2007 Ultra-low dark current InGaAs technology for focal plane arrays for low-light level visible-shortwave infrared imaging
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Abstract
Under the DARPA Photon Counting Arrays (PCAR) program we have investigated technologies to reduce the overall noise level in InGaAs based imagers for identifying a man at 100m under low-light level imaging conditions. We report the results of our experiments comprising of 15 InGaAs wafers that were utilized to investigate lowering dark current in photodiode arrays. As a result of these experiments, we have achieved an ultra low dark current of 2nA/cm2 through technological advances in InGaAs detector design, epitaxial growth, and processing at a temperature of +12.3°C. The InGaAs photodiode array was hybridized to a low noise readout integrated circuit, also developed under this program. The focal plane array (FPA) achieves very high sensitivity in the shortwave infrared bands in addition to the visible response added via substrate removal process post hybridization. Based on our current room-temperature stabilized SWIR camera platform, these imagers enable a full day-night imaging capability and are responsive to currently fielded covert laser designators, illuminators, and rangefinders. In addition, improved haze penetration in the SWIR compared to the visible provides enhanced clarity in the imagery of a scene. In this paper we show the results of our dark current studies as well as FPA characterization of the camera built under this program.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bora M. Onat, Wei Huang, Navneet Masaun, Michael Lange, Martin H. Ettenberg, and Christopher Dries "Ultra-low dark current InGaAs technology for focal plane arrays for low-light level visible-shortwave infrared imaging", Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 65420L (15 May 2007); https://doi.org/10.1117/12.720522
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