Multi-color IRFPAs made from HgCdTe grown by MOVPE

C. L. Jones; L. G. Hipwood; J. Price; C. J. Shaw; P. Abbott; C. D. Maxey; H. W. Lau; R. A. Catchpole; M. Ordish; P. Knowles; N. T. Gordon

doi:10.1117/12.720645

14 May 2007 Multi-color IRFPAs made from HgCdTe grown by MOVPE

C. L. Jones, L. G. Hipwood, J. Price, C. J. Shaw, P. Abbott, C. D. Maxey, H. W. Lau, R. A. Catchpole, M. Ordish, P. Knowles, N. T. Gordon

Author Affiliations +

Proceedings Volume 6542, Infrared Technology and Applications XXXIII; 654210 (2007) https://doi.org/10.1117/12.720645
Event: Defense and Security Symposium, 2007, Orlando, Florida, United States

Abstract

The drive towards improved target recognition has led to an increasing interest in detection in more than one infrared band. This paper describes the design, fabrication and performance of two-colour and three-colour infrared detectors made from HgCdTe grown by Metal Organic Vapour Phase Epitaxy (MOVPE). The detectors are staring, focal plane arrays consisting of HgCdTe mesa-diode arrays bump bonded to silicon read-out integrated circuits (ROICs). Each mesa diode has one connection to the ROIC and the colours are selected by varying the applied bias. Results will be presented for both two-colour and three-colour devices. In a two-colour n-p-n design the cut-off wavelengths are defined by the compositions of the two n-type absorbers and the doping and composition of the p-type layer are chosen to prevent transistor action. The bias polarity is used to switch the output between colours. This design has been used to make MW/LW detectors with a MW band covering 3 to 5 μm and a LW band covering 5 to 10 μm. In a three-colour n-p-n design the cut-off wavelengths are defined by the compositions of the two n-type absorbers and the p-type absorber, which has an intermediate cut-off wavelength. The absorbers are separated from each other by electronic barriers consisting of wide band-gap material. At low applied bias these barriers prevent photo-electrons generated in the p-type absorber from escaping and the device then gives an output from one of the n-type absorbers. At high applied bias the electronic barrier is pulled down and the device gives an output from both the p-type absorber and one of the n-type absorbers. Thus by varying the polarity and magnitude of the bias it is possible to obtain three-colours from a two-terminal device. This design has been used to make a SW/MW/MW detector with cut-off wavelengths of approximately 3, 4 and 6 μm.

Citation Download Citation

C. L. Jones, L. G. Hipwood, J. Price, C. J. Shaw, P. Abbott, C. D. Maxey, H. W. Lau, R. A. Catchpole, M. Ordish, P. Knowles, and N. T. Gordon "Multi-color IRFPAs made from HgCdTe grown by MOVPE", Proc. SPIE 6542, Infrared Technology and Applications XXXIII, 654210 (14 May 2007); https://doi.org/10.1117/12.720645

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available