Paper
30 April 2007 Advances in 3D integration of heterogeneous materials and technologies
D. Temple, J. M. Lannon, D. Malta, J. E. Robinson, P. R. Coffman, T. B. Welch, M. R. Skokan, A. J. Moll, W. B. Knowlton
Author Affiliations +
Abstract
Military applications demand more and more complex, multifunctional microsystems with performance characteristics which can only be achieved by using best-of-breed materials and device technologies for the microsystem components. Three-dimensional (3-D) integration of separate, individually complete device layers provides a way to build complex microsystems without compromising the system performance and fabrication yield. In the 3-D integration approach, each device layer is fabricated separately using optimized materials and processes. The layers are stacked and interconnected through area array vertical interconnects with lengths on the order of just tens of microns. This paper will review recent advances in development of 3-D integration technologies with focus on those which enable integration of heterogeneous materials (e.g. HgCdTe FPAs with silicon ROICs) or heterogeneous fabrication processes (e.g. resistive IR emitters with RIICs).
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Temple, J. M. Lannon, D. Malta, J. E. Robinson, P. R. Coffman, T. B. Welch, M. R. Skokan, A. J. Moll, and W. B. Knowlton "Advances in 3D integration of heterogeneous materials and technologies", Proc. SPIE 6544, Technologies for Synthetic Environments: Hardware-in-the-Loop Testing XII, 65440I (30 April 2007); https://doi.org/10.1117/12.722502
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon

Semiconducting wafers

Resistance

Microelectromechanical systems

Staring arrays

Readout integrated circuits

Infrared imaging

Back to Top