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3 May 2007 Generation of conducting polymer-based heterojunctions, diodes, and capacitors using an intermediate-layer lithography method
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In this work, conducting polymer-based heterojunctions, diodes and capacitors have been generated using an intermediate-layer lithography (ILL) approach which has been recently developed in our group. Polypyrrole (PPy) and poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS), Poly(methyl methacrylate) (PMMA) and aluminum were used as component materials in these devices. Compared with Si-based devices, conducting polymerbased devices have distinctive advantages of low weight and good flexibility, and may potentially replace the corresponding Si-based devices. A challenge is how to fabricate the conducting polymer-based microsystems. Most conducting polymers are sensitive to the environment, and their electrical properties tend to deteriorate over time due to overoxidation (air), moisture, high temperature and chemical alteration. The current fabrication techniques (e.g. lift-off, dry and wet etching processes) used in lithographic approaches involve ultra-violet, electron-beam, x-ray, gases (e.g., oxygen and nitrogen), DI water, and/or chemical solution (e.g. photoresist and acetone), making them improper to pattern conducting polymers. Since the ILL method does not involve aggressive chemistry in generation of patterns, it has been employed in this work to fabricate conducting polymer-based microdevices, particularly diodes and capacitors. In fabrication of the devices, multiple layers of polymers (e.g., PPy and PEDOT) and metals (e.g., Al) are coated on a PMMA sheet followed by the patterning with the insertion of Si molds. The detailed fabrication procedure and testing results are given in this paper.
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Xinchuan Liu, Anirban Chakraborty, Ganga Parthasarathi, and Cheng Luo "Generation of conducting polymer-based heterojunctions, diodes, and capacitors using an intermediate-layer lithography method", Proc. SPIE 6556, Micro (MEMS) and Nanotechnologies for Defense and Security, 65560Z (3 May 2007);

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