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12 June 2007 Performances of RCE photodetectors based on the internal photoemission effect
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Proceedings Volume 6593, Photonic Materials, Devices, and Applications II; 659329 (2007) https://doi.org/10.1117/12.722131
Event: Microtechnologies for the New Millennium, 2007, Maspalomas, Gran Canaria, Spain
Abstract
In this paper, a methodology for the analysis of a resonant cavity enhanced (RCE) photodetector, based on internal photoemission effect and working at 1.55 &mgr;m, is reported. In order to quantify the performance of photodetector, quantum efficiency including the image force effect, bandwidth and dark current as a function of bias voltage are calculated. We propose a comparison among three different Schottky barrier Silicon photodetectors, having as metal layers gold, silver or copper respectively. We obtain that the highest efficiency (0.2%) but also the highest dark current is obtained with metal having the lowest barrier, while for all devices, values of order of 100GHz and 100MHz were obtained, respectively, for the carrier-transit time limited 3-dB bandwidth and bandwidth-efficiency.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Casalino, L. Sirleto, L. Moretti, F. Della Corte, and I. Rendina "Performances of RCE photodetectors based on the internal photoemission effect", Proc. SPIE 6593, Photonic Materials, Devices, and Applications II, 659329 (12 June 2007); https://doi.org/10.1117/12.722131
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