Paper
11 January 2007 Optical characteristics of monocrystal silicon: current status of measurements
S. N. Skovorodko, V. Ya. Mendeleev, A. V. Kourilovich
Author Affiliations +
Proceedings Volume 6594, Lasers for Measurements and Information Transfer 2006; 65940J (2007) https://doi.org/10.1117/12.725600
Event: Lasers for Measurements and Information Transfer 2006, 2006, St. Petersburg, Russian Federation
Abstract
Methods and apparatuses for measuring optical constants and measured optical constants of silicon presented in literature published in time interval of about 50 year are described. It is found the relative difference for refraction index measured by different authors is about 10%. For absorption index, measured values differ from each other by about one order. Reasons for the found disagreement between experimental results are analyzed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. N. Skovorodko, V. Ya. Mendeleev, and A. V. Kourilovich "Optical characteristics of monocrystal silicon: current status of measurements", Proc. SPIE 6594, Lasers for Measurements and Information Transfer 2006, 65940J (11 January 2007); https://doi.org/10.1117/12.725600
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KEYWORDS
Silicon

Refractive index

Absorption

Silicon films

Optical testing

Oxides

Reflection

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