Formation of low energy tails in silicon delta-doped GaAs/AlAs multiple quantum wells

Aurimas Čerškus; Jurgis Kundrotas; Gintaras Valušis; Paul Harrison; Suraj Khanna; Edmund Linfield

doi:10.1117/12.726489

25 January 2007 Formation of low energy tails in silicon &dgr;-doped GaAs/AlAs multiple quantum wells

Aurimas Čerškus, Jurgis Kundrotas, Gintaras Valušis, Paul Harrison, Suraj Khanna, Edmund Linfield

Proceedings Volume 6596, Advanced Optical Materials, Technologies, and Devices; 659613 (2007) https://doi.org/10.1117/12.726489
Event: Advanced Optical Materials, Technologies, and Devices, 2006, Vilnius, Lithuania

Abstract

In this article we present results of an investigation the PL properties of highly Si &dgr;-doped GaAs/AlAs multiple QWs at liquid nitrogen and room temperatures. We discuss possible mechanisms for carrier recombination in the QW structures placing particular emphasis on the origin of the low energy tail in the PL spectra, and its features.

Citation Download Citation

Aurimas Čerškus, Jurgis Kundrotas, Gintaras Valušis, Paul Harrison, Suraj Khanna, and Edmund Linfield "Formation of low energy tails in silicon &dgr;-doped GaAs/AlAs multiple quantum wells", Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 659613 (25 January 2007); https://doi.org/10.1117/12.726489

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