Paper
14 February 2007 Effect of strong electric field on electrical characteristics of two-terminal porous silicon structures
Eugenijus Shatkovskis, Antanas Česnys, Jonas Gradauskas, Jolanta Stupakova, Oleg Kiprijanovič
Author Affiliations +
Proceedings Volume 6596, Advanced Optical Materials, Technologies, and Devices; 659615 (2007) https://doi.org/10.1117/12.726491
Event: Advanced Optical Materials, Technologies, and Devices, 2006, Vilnius, Lithuania
Abstract
Two-terminal diode-like porous silicon structures have been investigated under the impact of strong electric field. Strong electric field I-V current-voltage characteristics have been measured in pulse regime by applying electric pulses of 15 ns duration, at repetition rate of (100-150) Hz, creating average electric field in the structure up to (103-104) V/cm. Modification of structured state of the structures have been revealed at strong electric field influence, resulting in change and stabilizing of their series resistance.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eugenijus Shatkovskis, Antanas Česnys, Jonas Gradauskas, Jolanta Stupakova, and Oleg Kiprijanovič "Effect of strong electric field on electrical characteristics of two-terminal porous silicon structures", Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 659615 (14 February 2007); https://doi.org/10.1117/12.726491
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KEYWORDS
Silicon

Resistance

Aluminum

Etching

Boron

Crystals

Electrochemical etching

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