Paper
25 January 2007 Spectrophotometric and Raman spectroscopic characterization of ALD grown TiO2 thin films
Jaan Aarik, Aarne Kasikov, Ahti Niilisk
Author Affiliations +
Proceedings Volume 6596, Advanced Optical Materials, Technologies, and Devices; 659616 (2007) https://doi.org/10.1117/12.726492
Event: Advanced Optical Materials, Technologies, and Devices, 2006, Vilnius, Lithuania
Abstract
Properties of titanium dioxide thin films grown by atomic layer deposition from TiCl4 and H2O on SiO2 substrates were characterized using Raman spectroscopy and spectrophotometry methods. Raman spectroscopy revealed transformation of the film structure from amorphous to anatase, to anatase/rutile mixture and then back to anatase with the increase of deposition temperature from 100 to 680oC. Variations in the growth rate, refractive index and extinction index accompanied these structural changes. Analysis of the transmission curves demonstrated that differently from amorphous films, the crystalline films were optically inhomogeneous in the growth direction.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaan Aarik, Aarne Kasikov, and Ahti Niilisk "Spectrophotometric and Raman spectroscopic characterization of ALD grown TiO2 thin films", Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 659616 (25 January 2007); https://doi.org/10.1117/12.726492
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Cited by 3 scholarly publications.
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KEYWORDS
Refractive index

Raman spectroscopy

Atomic layer deposition

Crystals

Thin films

Titanium dioxide

Optical coatings

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