Generation-recombination noise in forward-biased 4H-SiC p-n diode

Sergey L. Rumyantsev; Alexander Dmitriev; Michael Levinshtein; Dmitri Veksler; Michael S. Shur; John Palmour; Mrinal Das; Brett Hull

doi:10.1117/12.723444

Translator Disclaimer

22 June 2007 Generation-recombination noise in forward-biased 4H-SiC p-n diode

Sergey L. Rumyantsev, Alexander Dmitriev, Michael Levinshtein, Dmitri Veksler, Michael S. Shur, John Palmour, Mrinal Das, Brett Hull

Author Affiliations +

Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66001J (2007) https://doi.org/10.1117/12.723444
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy

Abstract

The current and frequency dependencies of the low frequency noise have been investigated in 4H-SiC p⁺-n junctions in the frequency range 10⁰-10⁴ Hz and at current densities from 10^-4 to 10¹ A/cm². Good quality of the p⁺-n diode under investigation has been ascertained by high value of the recombination time in the space charge region, &tgr;R ≈ 70 ns, extracted from current voltage characteristic. At small current densities j ⩽ 10^-3 A/cm², the spectral noise density S_I ∝1/f^3/2. At 10^-3 A/cm² < j < 10^-2 A/cm², the generation-recombination (GR) noise predominates. The amplitude of this GR noise non-monotonically depends on current. At j ⩾ 10^-2 A/cm², the 1/f (flicker noise) is dominant. A new model of GR noise of the recombination current in forward biased p-n junction has been proposed. The model assumes that a trap level located relatively close to the conduction band is responsible for the observed GR noise. The main contribution to the GR noise comes from the fluctuations of the charge state of the trap. The model describes well both current and frequency dependencies of the observed GR noise.

Citation Download Citation

Sergey L. Rumyantsev, Alexander Dmitriev, Michael Levinshtein, Dmitri Veksler, Michael S. Shur, John Palmour, Mrinal Das, and Brett Hull "Generation-recombination noise in forward-biased 4H-SiC p-n diode", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66001J (22 June 2007); https://doi.org/10.1117/12.723444

ACCESS THE FULL ARTICLE