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11 May 2007 Electron-beam mask writer EBM-6000 for 45 nm HP node
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Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 660703 (2007) https://doi.org/10.1117/12.728917
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan
Abstract
In order to comply with the demanding technology requirements for 45 nm half pitch (HP) node (32 nm technology node), Nuflare Technology Inc. (NFT) has developed Electron-beam mask writing equipment, EBM-6000, with increased current density (70A/cm2), while its other primary features basically remain unchanged, namely 50 kV acceleration voltage, Variable Shaped Beam (VSB)/vector scan, like its predecessors [1-5]. In addition, new functionalities and capabilities such as astigmatism correction in subfield, optimized variable stage speed control, electron gun with multiple cathodes (Turret electron gun), and optimized data handling system have been employed to improve writing accuracy, throughput, and up-time. VSB-12 is the standard input data format for EBM-6000, and as optional features to be selected by users, direct input function for VSB-11 and CREF-flatpoly are offered as well. In this paper, the new features and capabilities of EBM-6000 together with supporting technologies are reported to solidly prove the viability of EBM-6000 for 45 nm HP node.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Yashima, Kenji Ohtoshi, Noriaki Nakayamada, Hirohito Anze, Takehiko Katsumata, Tomohiro Iijima, Rieko Nishimura, Syuuichiro Fukutome, Nobuo Miyamoto, Seiji Wake, Yusuke Sakai, Shinji Sakamoto, Shigehiro Hara, Hitoshi Higurashi, Kiyoshi Hattori, Kenichi Saito, Rodney Kendall, and Shuichi Tamamushi "Electron-beam mask writer EBM-6000 for 45 nm HP node", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660703 (11 May 2007); https://doi.org/10.1117/12.728917
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