Embedded optical proximity correction for the Sigma7500 DUV mask writer

Anders Österberg; Lars Ivansen; Henrik Åhlfeldt; Hans Fosshaug; Tom Newman; Amanda Bowhill; Emile Sahouria; Steffen Schulze

doi:10.1117/12.728918

11 May 2007 Embedded optical proximity correction for the Sigma7500 DUV mask writer

Anders Österberg, Lars Ivansen, Henrik Åhlfeldt, Hans Fosshaug, Tom Newman, Amanda Bowhill, Emile Sahouria, Steffen Schulze

Author Affiliations +

Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 660704 (2007) https://doi.org/10.1117/12.728918
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan

Abstract

Optical proximity correction (OPC) is widely used in wafer lithography to produce a printed image that best matches the design intent while optimizing CD control. OPC software applies corrections to the mask pattern data, but in general it does not directly compensate for the mask writer and mask process characteristics. The Sigma7500 deep-ultraviolet (DUV) mask writer projects the image of a programmable spatial light modulator (SLM) onto the mask using partially coherent optics similar to wafer steppers, and the residual optical proximity effects of the mask writer are in principle correctable with established OPC methods. To enhance mask patterning, an embedded OPC function called LinearityEqualizer^TM has been developed for the Sigma7500 that is transparent to the user and which does not degrade mask throughput. It employs the Mentor Graphics Calibre OPC engine, selected for the computational speed necessary for mask run-time execution. A multi-node cluster computer applies optimized table-based CD corrections to polygonized pattern data, which is then refractured into a standard writer format for subsequent data processing. This short-range proximity correction works in conjunction with ProcessEqualizer^TM, a previously developed print-time function that reduces long-range process-related CD errors. OPC flattens the linearity behavior for all linewidths and pitches, which should improve the total CD uniformity on production photomasks. Along with better resolution of assist features, this further extends the application space of DUV mask writing. Testing shows up to a 4x reduction in the range of systematic CD deviations for a broad array of feature sizes and pitches, and dark assist features are reliably printed down to 120 nm at mask scale.

Citation Download Citation

Anders Österberg, Lars Ivansen, Henrik Åhlfeldt, Hans Fosshaug, Tom Newman, Amanda Bowhill, Emile Sahouria, and Steffen Schulze "Embedded optical proximity correction for the Sigma7500 DUV mask writer", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660704 (11 May 2007); https://doi.org/10.1117/12.728918

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