Paper
11 May 2007 1-nm of local CD accuracy for 45-nm-node photomask with low sensitivity CAR for e-beam writer
Kunihiro Ugajin, Masato Saito, Machiko Suenaga, Tomotaka Higaki, Hideaki Nishino, Hidehiro Watanabe, Osamu Ikenaga
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Abstract
We achieved highly accurate Local CD in the vicinity of 1nm with the newly developed low sensitivity chemically amplified resist (CAR) for the e-beam reticle writer, EBM-6000. We applied shot noise model to estimate Line Edge Roughness (LER). According to the estimation result, LER is improved by increasing the threshold dosage. We evaluated the performance of newly developed low sensitivity CAR. Local CD accuracy, LER, pattern resolution and drawing time are evaluated. We concluded that the performance with the low sensitivity CAR was good enough to produce photomasks for 45nm half pitch (HP) devices.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kunihiro Ugajin, Masato Saito, Machiko Suenaga, Tomotaka Higaki, Hideaki Nishino, Hidehiro Watanabe, and Osamu Ikenaga "1-nm of local CD accuracy for 45-nm-node photomask with low sensitivity CAR for e-beam writer", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66070A (11 May 2007); https://doi.org/10.1117/12.728923
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Line edge roughness

Photomasks

Electron beams

Chemical analysis

Diffusion

Electronics

Reticles

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