Paper
14 May 2007 CD metrology by an immersion microscope with high NA condenser lens for 45-nm generation masks
Takeshi Yamane, Rikiya Taniguchi, Takashi Hirano
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Abstract
An immersion microscope with high NA condenser lens is evaluated. The effects of high NA condenser lens are studied with simulation and experiment. The one effect is CD linearity improvement. We have already reported that our calibration method improves CD linearity of an immersion microscope. The simulation result indicates the high NA condenser lens improves the accuracy of the calibration method. The other effect is CD repeatability. The experimental result demonstrates the high NA condenser lens reduces the peak of intensity profile and improves CD repeatability. As the result, an immersion microscope with high NA condenser lens is available for CD measurement of 45 nm generation masks.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Yamane, Rikiya Taniguchi, and Takashi Hirano "CD metrology by an immersion microscope with high NA condenser lens for 45-nm generation masks", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660711 (14 May 2007); https://doi.org/10.1117/12.728950
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KEYWORDS
Microscopes

Calibration

Photomasks

Critical dimension metrology

Semiconducting wafers

Wafer-level optics

Binary data

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