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14 May 2007 LER transfer from a mask to wafers
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Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 66071H (2007) https://doi.org/10.1117/12.728964
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan
Abstract
Contribution of mask line edge roughness (LER) to resist LER on wafers was studied both by simulations and experiments. LER transfer function (LTF) introduced by Naulleau and Gallatin was generalized to include the effect of mask error enhancement factor (MEEF). Low spatial frequency part of LTF was enhanced by MEEF while high spatial frequency part was suppressed due to the numerical aperture limit of a stepper. Our model was experimentally verified as follows. First LER of a mask was measured by a scanning electron microscope. Then the mask LER was multiplied by LTF to simulate the aerial image LER on wafers. It was confirmed that the simulated LER agreed well with the LER measured by AIMSTM. Based on our model the contribution of the mask LER to the resist LER on wafers was estimated. According to our estimation the requirement of the mask LER should be as tight as that of the resist LER on wafers.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroyoshi Tanabe, Ginga Yoshizawa, Yan Liu, Vikram L. Tolani, Koichiro Kojima, and Naoya Hayashi "LER transfer from a mask to wafers", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66071H (14 May 2007); https://doi.org/10.1117/12.728964
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