A study of EB pattern write system design for 22-nm node and beyond

Shuichi Tamamushi; Hideaki Hamada

doi:10.1117/12.728985

15 May 2007 A study of EB pattern writer system design for 22-nm node and beyond

Shuichi Tamamushi, Hideaki Hamada

Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 660722 (2007) https://doi.org/10.1117/12.728985
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan

Abstract

The optical lithography still remains to be the mainstream coupled with RETs (resolution enhancement techniques) because of the various and serious difficulties other NGL candidates (Electron beam direct writing, EUV and etc.) are facing now. Development of OPC have made pattern data complexity large so that increasing rate of pattern data volume is higher than the number of transistors in a chip. We studied key issues of development of mask writer especially for throughput.

Citation Download Citation

Shuichi Tamamushi and Hideaki Hamada "A study of EB pattern writer system design for 22-nm node and beyond", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 660722 (15 May 2007); https://doi.org/10.1117/12.728985

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