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18 June 2007 Finite element analysis of EUV lithography
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Extreme ultraviolet (EUV) lithography is seen as the main candidate for production of next generation computer technology. Due to the short wavelength of EUV light (≈ 13 nm) novel reflective masks have to be used in the production process. The high quality requirements for these EUV masks make it necessary to measure and characterize their pattern profile. Here we present numerical simulations of EUV masks with the finite element method (FEM) which allow the reconstruction of geometrical mask parameters like critical dimension (CD), sidewall angles, layer thicknesses from experimental scatterometry data.1 Special numerical techniques like domain decomposition algorithms and high order finite elements become very important to obtain accurate numerical results in small computational time. We analyze the sensitivity of scatterometry with respect to the geometrical line profile. We demonstrate the determination of line profiles from experimental scatterometry data and compare our values to direct microscopic measurements using CD-SEM and AFM.
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Jan Pomplun, Sven Burger, Frank Schmidt, Frank Scholze, Christian Laubis, and Uwe Dersch "Finite element analysis of EUV lithography", Proc. SPIE 6617, Modeling Aspects in Optical Metrology, 661718 (18 June 2007);

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