Characteristic of HgCdTe photoconductive detector in energy distribution measurement system of laser spot in far field

Jianmin Zhang; Guobin Feng; Jun Zhao

doi:10.1117/12.790848

3 March 2008 Characteristic of HgCdTe photoconductive detector in energy distribution measurement system of laser spot in far field

Jianmin Zhang, Guobin Feng, Jun Zhao

Author Affiliations +

Proceedings Volume 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection; 66211I (2008) https://doi.org/10.1117/12.790848
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China

Abstract

Detector is an important device for the far-field laser spot measuring apparatus in form of photoelectrical detector array, for it acts as an optical-to-electrical converter in measure. Two working parameters of n-type HgCdTe photoconductor are discussed in this paper. The fundamental electrical properties of n-type Hg_1-xCd_xTe material are summarized and related to device performance parameters. It can be found that the dark resistance R_d and the voltage responsivity R_v are closely bound up with temperature T and the alloy composition x, and the normalized calculating R_d-T and R_v-T characteristic curves are in good agreement with experimental results at temperature below 20°C. And then the dynamic responses of a detector under laser irradiation are studied by utilizing 2-D transient heat transfer model and empirical formulas. Furthermore, experimental investigation on laser damage in PC-type HgCdTe devices is operated by a means named 1on1. Detectable change in performance parameters has not been found under the irradiation of in-band laser, at power density beyond the detector linear response zone, and time of 200s. When the power of irradiation strengthened, the dark resistance increased, and the responsivity reduced. By observing the surface morphology of HgCdTe wafers, calculating the compositions x from R_d-T characteristic, the causes for performance changing has been analyzed.

Citation Download Citation

Jianmin Zhang, Guobin Feng, and Jun Zhao "Characteristic of HgCdTe photoconductive detector in energy distribution measurement system of laser spot in far field", Proc. SPIE 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection, 66211I (3 March 2008); https://doi.org/10.1117/12.790848

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