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3 March 2008 Optical dominated high power sub-nanosecond pulse system
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Proceedings Volume 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection; 66211W (2008) https://doi.org/10.1117/12.790941
Event: International Symposium on Photoelectronic Detection and Imaging: Technology and Applications 2007, 2007, Beijing, China
Abstract
High power sub-nanosecond electrical pulse system based on photoconductive semiconductor switch (PCSS) is reported. To get high power sub-nanosecond electrical pulse, experiments of three kinds of switches such as a lateral semi-insulating GaAs PCSS, gas gap added into the two electrodes of the switch on the GaAs chip and combinatorial switchs of GaAs PCSS with gas switch are triggered by nano-second laser pulse. The source of the triggered laser is YAG lasers, and the width of the laser is about 3.5 ns. A maximum current is only 38A by a single 3.5mm PCSS. The combinatorial switch of a 3mm-gap PCSS and a 0.6~0.8mm gas switch is triggered at the biased voltage 4000V, a high current pulse is acquired with the peak value above 5160A, and ns risetime. The voltage transmission efficiency is more than 100% (129%), which can not be answered for the ohm-theorem. This phenomena is explained with the theorem of plasma.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Shi, Zheng Liu, and Xue Liao "Optical dominated high power sub-nanosecond pulse system", Proc. SPIE 6621, International Symposium on Photoelectronic Detection and Imaging 2007: Photoelectronic Imaging and Detection, 66211W (3 March 2008); https://doi.org/10.1117/12.790941
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