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31 May 2007 Light induced phenomena in amorphous As100-xSx and As40Se60:Sn thin films
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Proceedings Volume 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III; 663509 (2007) https://doi.org/10.1117/12.741870
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 2006, Bucharest, Romania
Abstract
Photostructural transformations in amorphous films of chalcogenide glasses (ChG) under light irradiation present scientific and practical interests. From scientific point of view, because the composition ofChG determine the kind of structural units and the mean coordination number, in the present work the amorphous films of the chalcogenide systems As1ooSe (x40÷98) and As40Se60:Sny (As50Se50:Sny) (y=O÷1O.O at.% Sn) were studied. The changes of the refractive index under light irradiation and heat treatment are calculated from the transmission spectra. The more sensitive to light irradiation are the amorphous films of As60Se40 and As50Se50, which exhibit big modifications of the refractive index ((delta-n/n) = 0.394).
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Maria A. Iovu, Mihail S. Iovu, Diana V. Harea, Eduard P. Colomeico, and Valeriu G. Ciorba "Light induced phenomena in amorphous As100-xSx and As40Se60:Sn thin films", Proc. SPIE 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 663509 (31 May 2007); https://doi.org/10.1117/12.741870
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