Light induced phenomena in amorphous As100-xSex and As40Se60:Sn thin films

Maria A. Iovu; Mihail S. Iovu; Diana V. Harea; Eduard P. Colomeico; Valeriu G. Ciorba

doi:10.1117/12.741870

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31 May 2007 Light induced phenomena in amorphous As_100-xS_x and As₄₀Se₆₀:Sn thin films

Maria A. Iovu, Mihail S. Iovu, Diana V. Harea, Eduard P. Colomeico, Valeriu G. Ciorba

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Proceedings Volume 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III; 663509 (2007) https://doi.org/10.1117/12.741870
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 2006, Bucharest, Romania

Abstract

Photostructural transformations in amorphous films of chalcogenide glasses (ChG) under light irradiation present scientific and practical interests. From scientific point of view, because the composition ofChG determine the kind of structural units and the mean coordination number, in the present work the amorphous films of the chalcogenide systems As1ooSe (x40÷98) and As₄₀Se₆₀:Sn_y (As₅₀Se₅₀:Sn_y) (y=O÷1O.O at.% Sn) were studied. The changes of the refractive index under light irradiation and heat treatment are calculated from the transmission spectra. The more sensitive to light irradiation are the amorphous films of As₆₀Se₄₀ and As₅₀Se₅₀, which exhibit big modifications of the refractive index ((delta-n/n) = 0.394).

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Maria A. Iovu, Mihail S. Iovu, Diana V. Harea, Eduard P. Colomeico, and Valeriu G. Ciorba "Light induced phenomena in amorphous As_100-xS_x and As₄₀Se₆₀:Sn thin films", Proc. SPIE 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 663509 (31 May 2007); https://doi.org/10.1117/12.741870

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