You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
31 May 2007Light induced phenomena in amorphous As100-xSx and As40Se60:Sn thin films
Photostructural transformations in amorphous films of chalcogenide glasses (ChG) under light irradiation present scientific
and practical interests. From scientific point of view, because the composition ofChG determine the kind of structural units
and the mean coordination number, in the present work the amorphous films of the chalcogenide systems As1ooSe
(x40÷98) and As40Se60:Sny (As50Se50:Sny) (y=O÷1O.O at.% Sn) were studied. The changes of the refractive index under
light irradiation and heat treatment are calculated from the transmission spectra. The more sensitive to light irradiation are
the amorphous films of As60Se40 and As50Se50, which exhibit big modifications of the refractive index ((delta-n/n) = 0.394).
The alert did not successfully save. Please try again later.
Maria A. Iovu, Mihail S. Iovu, Diana V. Harea, Eduard P. Colomeico, Valeriu G. Ciorba, "Light induced phenomena in amorphous As100-xSex and As40Se60:Sn thin films," Proc. SPIE 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 663509 (31 May 2007); https://doi.org/10.1117/12.741870