Paper
11 May 2007 The optimization of magnetic sensitive MOSFET structures
George Caruntu, Cornel Panait
Author Affiliations +
Proceedings Volume 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III; 66350Z (2007) https://doi.org/10.1117/12.742077
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 2006, Bucharest, Romania
Abstract
The optimal processing of sensors-provided signal, imposes their integration on the same chip, with the amplifier circuit. In this paperwork, based on the model of dual Hall devices, it is analysed the operating conditions, and are established the noise main characteristics for double drain magnetotrasistor structure realised in the MOS circuits technology. Using numerical simulation it is emphasized the way in which the geometry and material properties influence on the device performances. There are also presented and described the electrical diagrams of the transducers which contain such sensors.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George Caruntu and Cornel Panait "The optimization of magnetic sensitive MOSFET structures", Proc. SPIE 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 66350Z (11 May 2007); https://doi.org/10.1117/12.742077
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KEYWORDS
Magnetism

Signal to noise ratio

Silicon

Sensors

Field effect transistors

Gallium arsenide

Molybdenum

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