This PDF file contains the front matter associated with SPIE Proceedings Volume 6636, including the Title Page, Copyright information, Table of Contents, Introduction (if any), and the Conference Committee listing.

Infrared second generation photodetectors developments have been carried out in RD&P Center "Orion" for creation short wavelength IR (SWIR, 1 to 3μm), medium wavelength IR (MWIR, 3 to 5 μm) and long wavelength IR (LWIR, 8 to 1 μm) on the base of lead chalcogenides (PbS, PbSe), indium antimonide (InSb) and mercury cadmium telluride (CdHg1Te). Performance and operational functionality of 2xl28 (PbS, PbSe), 256x256 (InSb), and 2x256, 4x288 256x256, 384x288, 768x576 (MCT) focal plane arrays (FPA) are specified. Requirements to the FPA for main directions of thermovision systems applications are given.

The staring array numbers of pixels are larger and larger and offer system solutions in the different IR wavebands. At Sofradir, the HgCdTe (Mercury Cadmium Telluride IMCT)material and process, as well as the hybridization technology, have been taken to an even more advanced level of sophistication to achieve these new high performance staring arrays. A lot of technological improvement have been made regarding uniformity of Focal Plan Arrays (FPA), read-out circuits with new functions like the Analog to Digital Conversion (ADC), and finally the reliability of the whole dewar detector and cooler assembly have been drastically increased during these last years. In mid-wave (MWIR) l280x1024 HgCdTe high performance staring array is presented. Also, development trends for future IR detectors are presented.

32*288 format FPA based on InSb two dimension arrays (IDA) of photodiodes with function of digital TDI were investigated at low background flow. Dark currents of TDA photodiodes in wide temperature region, spectral noise distribution and threshold power with TDI simulation are investigated. It was established that at T=77K dark current is (I - 3)*10-11A at optimal negative bias and decreases in the order of magnitude at T=65K. Threshold power at T=77K at integration time Ti=6 ms is not more 2*10^-14 W/pixel and is limited commonly by dark current noise. Modeling of digital TDI showed that not more than twenty TDI stages are effective because of the presence of 1/f noise and threshold power would be at about 3*10^-15 W/pixel.

Matrix photoreception IR devices (MPRD) are of interest for use in various areas. In particular, such devices are demanded in defensive systems, in systems on detection and preventing of extraordinary situations, meteorology, astronomy and others. The main characteristics of MPRDs are: quantify of threshold, spectrum range of photo sensibi1ity size of pixels, which complete the matrix; number of these pixels that determine the format of the matrix. Multiplexer, that provides control and transformation of parallel images of entering flashing into a sequence of electric signals, is a main element of the photo receiving matrixes.

Transmittance spectra of epitaxial layers grown on the basis of mercury and cadmium telluride (MCT) alloys have been measured within the wavelength number range of (5000 cm^-1<ν<500 cm^-1). P-type epitaxial layers were grown both by liquid-phase epitaxy method (LPE) on CdZnTe substrates and molecular-beam epitaxy (MBE) on GaAs substrates. The MCT layer parameters such as epitaxial layer thickness d, cutoff wavelength λ₀₅, composition x were calculated from the spectra. JR transmittance spectra simulation method was developed to determine the semiconductor multilayer structures characteristics. Fourier Transform (FT) method was suggested to determine the thickness of MCT epitaxial layers.

The focal plane array (IR FPA) on the basis of metal-insulator-structure (MIS) photodetectors on InAs auto-epitaxial substrate ol 8x8 elements is designed and fabricated. It is shown, that the IR FPA provides definition of coordinate and time of arrival of optical pulse signals with energy 8x10^-17 J/element and accuracy not worse 100 ns.

One of the methods, allowing to implement the all-round surveillance system with the minimal mass and overall dimensional characteristics, is the method of digital image-rotation compensation. Present article is devoted to studying of this method with the purpose of creation of the bases of mathematical model of such system in which mathematical laws which describe movement of each pixel of the infrared Snapshot focal plane array (FPA) in the object space should lay.

Physical, material science and technological aspects (adequate material and substrate choice, different physical effects and limitations of modern simulation methods) are discussed. Analysis of modern microelectronics and optoelectronics development trends shows that rigid boundaries between microoelectronics and optoelectronics are smearing. Wide materials range previously used only in optoelectronics ( A³ B⁵ - , A² B⁶ -, A⁴ B⁴ - compounds, their sold alloys, diamond, organic material etc.) are now of interest for LSI designers also. Although wide range of different substrates types (organic and inorganic, single crystalline and amorphous, rigid and flexible) are now used in optoelectronics optically transparent and electrically insulating substrates are preferable for integrated optoelectronics. One type of such substrates namely sapphire is of essential practical interest now because silicon on sapphire (SOS) structures are used for LSI implementation and gallium nitride and its alloys on sapphire stwctures (GNS) are used for super bright LEDs, LDs and photodetectors fabrication. Special attention is paid to optical properties of organic structures as very promising media both for integrated optoelectronics and microelectronics. Different physical effects (band structure, quantum, disorder, strain, carrier heating effects) as well as limitations of modern simulation methods are discussed.

Brief history, modern state and development trends of organic electroluminescent structures technology (so-called OLED technology) are reviewed including research activities in this field in Russia. It's noted that OLED technology is one of the most promising newly emerging display technologies. Due to advantages of these devices (low power consumption, potential flexibility, wide color range) it is particularly well suited for small area display applications (micro displays) such as cell phones, virtual imaging systems, portable electronics. Experimental results for homemade blue light emitting OLED structures and hermetically sealed numeric displays are presented including photoluminescence (PL) and electroluminescence (EL ) current-voltage and brightness characteristics. It is noted that visible electroluminescence is observed at ultra low current level of nearly 1 μA, luminous efficiency exceeding 1 lm/W thus being nearly the same as for super bright inorganic inGaN/IGaN LEDs. Special attention is paid for destabilizing factors (temperature and degradation phenomena) influence on device characteristics.

Brief history and development trends of organic materials based photosensitive devices including home activities in this field are presented. New home-made organic materials are briefly reviewed including DA - BuTAZ, Zn ( OB-pDA), Zn (OBGO)₂ , Zn (OBBA)₂ PTA. Data are presented for new organic materials optical properties (both photoluminescence and absorption) in the wide spectral range. It's noted that large Stokes shift is generally observed between optical absorption and luminescence bands. Two layer device structures characteristics have been studied. Data are presented for their current-voltage and photoelectric characteristics. It's noted that photosensitivity spectra have complicated character resembling that of absorption its maximum being located in UV spectral region. Comparison between organic and inorganic photodetectors is presented. Several differences are observed namely power-law current-voltage dependence and essential increase of photosensitivity with applied voltage.

Article is devoted to development and research of radiation resistance of photodiodes on the basis of layered compounds ЭaCe, БlHCe, ЭaTe intended for visible and near IR-region of a spectrum and the process of diffusion of various impurity in layered semiconductors. It is shown that in new manufacturing techniques of photodiode structures initial materials ЭaCe, ЭaTe and БlHCe were exposed to influence ionizing irradiations at small fluences, and then on them processes of diffusion of compensating elements with preliminary annealing were made. Specified changes in technology of reception of photosensitive elements have allowed to receive photodiode structures with more than five elements. Radiation resistance of the researched photodiodes have been determined and the opportunity of their use under conditions of high radiation is revealed.

This paper reviews some recent developments in the high-speed photodiodes for 2.0-4.0 im spectral range. We report investigation, design and fabrication of broad bandwidth (2 GHz) GaInAsSb/GaA1AsSb p-i-n photodiodes operating in the 0.9-2.4 μm spectral range with submicroampere dark cunent. As well, we present InAs-based and InAs/InAsSbP photodiodes with long-wavelength cutoff of 3.8 μm. An analysis of the photodiode performance through the investigation of current-voltage, capacitance-voltage and spectral responsivity characteristics was carried out. Also, noise and speed-response characteristics were studied. In addition to high-speed response and low noise level these photodiodes offer room-temperature operation and hence are commercially viable. These devices are of great interest for a wide range of applications, such as high-resolution laser diode spectroscopy of gases and molecules, eye-safe laser rangefinding systems, the free-space optical link as well as systems of optical fiber communication.

The features of the electrical, optical and photoelectric properties of gallium (Ga) doped Pb_1-xSn_xSe (0,03 less than or equal to x less than or equal to 0,07) epitaxial films (N_GaO,5l at%) obtained by the molecular beam condensation method (MBC) are investigated. It is established that the interband absorption edge are stipulated from nondirect transition, the value of band gap (E_g), temperature coefficient of E_g are calculated. The conditions of preparing metal - Pb_1-xSn_xSe photodiode structures are determined and capacity temperature dependence of metal - Pb_1-xSn_xSe structure are analysed. The current-voltage and capacity-voltage characteristics of the obtained photodiodes.

In the present work results of study of a photodetector with thermoelectric cooler for operation in the spectral range 3-5 μm have been presented. As a material for sensitive elements Cd_1-xHg_xTe (x=0.28-0.30) solid solution single crystals were used. For cooling a photosensitive element three-cascade thermoelectric cooler providing cooling on a temperature level ~ 200 K was used. It is established that the value of the specific detectability of developed photoreceiver at ~ 200 K on λ= 4,5 λm wavelength equals D_λMAX greater than or equal to 1 x 10¹⁰ cm x Hz^1/2W^-1.

Under various external conditions the features of initial and sensitized photoconductivity in p-GaSe with N_REE ≈ 0÷10^-1 at. % have been investigated. It is established that in the initial state investigated crystals possess photosensitivity only in the intrinsicl absorption region, photoelectric threshold and a relaxation velocity vary with change of N_REE. Under the influence by intrinsic highlight with relatively high intensity, or an external electric voltage (U) greater some critical value, investigated samples acquire photosensitivity also in the impurity region. It is supposed that the sensitization of the impurity photoconductivity in this material is connected to presence in the forbidden band of shallow trapping levels which concentration grows with increasing N_REE. The opportunity of the creation of highly stable photodetectors for visible and near IR irradiation with controlled sensitivity on the base of p-GaSe crystals has been shown.

Uncooled photoelectromagnetic detectors (PEM-detector) on the basis of cadmium - mercury telluride solid solutions of composition x < 0.2 find application in opto-electronic systems with use of the C0₂-laser radiation with wave-length of 10.6 μM. [1] To advantages of such detectors it is possible to attribute absence of an external electric supply that reduces a level of noise and considerably reduces thermal loading on photodetector as well as it is a high speed responsivity that allows to use them in heterodyne systems of registration. The theoretical calculations of parameters of PEM detector has been carried out and results of development and research of uncooled PEM-detector on basis of Cd_xHg_1-xTe with x=0.2 of 6÷7 μm range of spectrum are represented by us in paper [2]. At the heart of work the researches of parameters of the PEM detector depending on a level of acceptor doping of the semiconductor have been discounted. In the present work the results of research of an opportunity of increasing of parameters of the PEM detector on basis of Cd_xHg_1-xTe with x = 0.167 corresponding to a maximum of spectral sensitivity on wave-length of 10.6 μm at room temperature are represented.

The first part of the work is devoted to the problem of computer simulation of static image intensifiers and streak image tubes. The most peculiar and sensible points of the simulation, such as image curvature surface, aberration coefficients, spatial and temporal resolution along the work area, are illustrated on typical examples. The problem of image curvature correction is discussed as well. The second part of the work outlines the theoretical grounds and results of computer-aided design of a principally new photoelectron-optical system with time-depending fields capable of essential compressing of electron bunches for the needs of time-resolved electron diffraction (TRED) experiments. Some recent experimental results on the bunch compressing obtained with the newly designed and manufactured photoelectron gun are presented.

The conditions of reflectionless quenching of electromagnetic radiation in the system consisting of semi-infinite absorbing substrate and consistently superimposed on it two non-adsorbing layers of a coat are found.

This paper presents invesigation findings of electron-beam influence on parameters and characteristics of trialcali and bialkali photocathocles of vacuum photoelectric devices and electron-beam amplification channels modification of microchannel plate image intensifier (MCP) of the electrooptical transducer. The electron-beam processing (EBP) increases total sensitivity by 10 - 12% and reduces spoilage in photocathode production to a fourth. The noise factor of MCP subjected EBP before recovery procedure MCP, reduces in 1.5 - 2.0 times, the sensibility of electrooptical transducer increases.

A new variant of fabricating of heterostructures with InAs quantum dots for infrared photodetectors by metalorganic chemical vapor deposition is discussed. A distinctive feature of the growth process is alternation of low and high temperature during growth of GaAs barrier layers. Sandwich structures with high density of quantum dots with high "aspect ratio" value have been grown by use of increased time of quantum dots growth. In these structures photoconductivity near to 4.5 μm is observed up to 200K. Responsitivity is O.5A/W at a temperature of 90K, detectivity is 3*10⁹ cmHz^1/2W^-1. Peculiarities of lateral infrared photoconductivity and electron transport in heterostructures with quantum dots and the two-dimensional electron channel connected with change in the mobility of 2D electrons caused by photoionization of quantum dots are shown. The first observation of the lateral intraband infrared photoconductivity in non-doped structures at additional photoexcitation as well as lateral interband photoconductivity in the range 1-2.7 μm at room temperature is reported.

There is the presentation of investigation results of last native elaborations of b/w high sensitive CCD cameras for optical telescope application. By the example of SDU-259 camera (000"Specteletehnika", Moscow) capability of its use as a digitized TV guiding camera for large optical telescopes is demonstrated. In SAO RAS there is constructed SDU-259C camera with termoelectric cooler equipped. The parameters of CCD camera SDU-259C and its test results when used with 10 inch telescope "Meade LXD-55" are given.

There has been created a TV system which is intended for the remote real-time computer control of night cloudness conditions during observations with the optical telescopes of SAO RAS simultaneously all over the sky hemishere at the 6m telescope site neighbourhood. The features of developing such systems are considered. Technical parameters of the system devices program interlaces and the description of operation principle are given.

In the report the works devoted to methods and technique of a spectral thermal imaging are considered. For deriving the spectral images of objects are used as methods of an immediate optical filtration with the help of tunable spectral filters of different types (optical-acoustic, interference, interferential - polarization, filters on the basis of total interior reflection and other), and methods of selection of the spectral images grounded on mathematical handling of optical fields, recorded by a matrix photodetector (for example, after a Fourier-interferometer, holograms and other). The principles of spectral selection of the images and paths of build-up spectral thermal imagers are analyzed.

Parameter calculations were carried of filtering devices in one of which the phenomenon of the total internal reflection was used. It is expected that these devices may be suitable for imagery of objects in the given narrow spectral bands - spectral imaging (SI) and for obtaining the spectral maps of fast flowing past processes.

The optical scheme of a multispectral thermal imaging (MSTI) is reviewed on the basis of a staring thermal imaging and interferometers established bevel way of a Brewster to an axis of sighting of the device. The calculations of a usable sensitivity, resolving power and other parameters of this device are conducted.

The results of theoretical analysis of influence of the photo-induced space charge upon the Dember's effect (photo- EMF) in the case of inter-band absorption of low-intensity optical radiation and non-equilibrium carrier recombination via deep impurity are presented. The model of a single recombination deep acceptor level and shallow donor impurity is considered. The task is solved beyond the commonly used approximation of quasi-neutrality. It is shown that the solution beyond the approximation of quasi-neutrality may be basically differed from the quasi-neutral solutions.

For the first time on the experimental IR reflection spectra R(λ) of α -Ag₂Se films with charge carrier concentration 4,0 x 10¹⁸ cm^-3 at 300 K behind of plasma minimum (1150 cm^-1) are detected two further minimums (800 cm^-1 and 550cm^-1), stipulated by interaction of plasmon and long-wave optical (LO) phonons. It was founded the peculiarities in the behaviour of the optical function (ε₁; ε₂; -Im ε^-1) at the interaction of the free charge carrier with the polarizable ions of lattice oscillations. The frequency of longitudinal and transversal phonons is calculated.

It has been developed a new theoretical model for the photosensitivity of porous silicon which takes into account the recombination of photocarriers at the surfaces of spherical pores. An expression for the semiconductor photoconductivity has been derived under assumption of uniform generation of photocarriers and diffusion character of their movement. The photosensitivity of porous silicon has been shown to strongly depend on the velocity of photocarriers recombination at the pore's surfaces, radius of pores and average distance between pores.

We report the experimental observation of superluminescence in the wavelength range 1 .4 - 4.5 μm from epitaxial structures Cd_x4Hg_1-xTe under pulsed optical pumping by Nd:YAG laser. The samples Cd_xHg_1-xTe were grown on GaAs and Si substrates by the Molecular Beam Epitaxy. The stimulated emission has been observed from the structures at temperatures 77 - 200 K. Details of the samples, observation scheme, the super luminescence spectra are discussed.

The results of study of the current oscillations in Ag₃In₅Se₉ stimulated by electric field and IR-irradiation have been presented. Depending on intensity and wavelengths of IR-irradiation, intensity of the electric field and temperature current oscillations in a range of frequencies 0,8 ÷ 200 Hz are observed. The revealed features of the current oscillations stimulated in Ag₃In₅Se₉ single crystals by an electric field and the IR-irradiation are explained on the basis of three-level system in the consent with which field dependence of the capture cross-section for charge carriers on local levels stimulates intrinsic photoconductivity at excitation of the sample by IR-irradiation in the range 1,12 ÷ 1.2 μm and 1,56 ÷ 1,75 μm.

In the work a method of discrimination of exposure skewness contribution and differences of p-n and n-p junctions of p-n-p structure to the anomalous photovoltage effect (APV-effect) in the films of cadmium telluride is suggested.

The features of growth, structure and photoelectric properties of Pb1-xMnxSe (x=0.02÷0.04) epitaxial films grown by the molecular beams condensation method in vacuum 10^-4 Pa on BaF₂ (111) substrate have been investigated. It is shown that received films possess high photosensitivity at 77 K temperature and their spectral characteristics vary by change of x. Shift of the maximum of spectral photosensitivity to shorter wavelengths with growth of x is explained by the increase in width of the forbidden band of Pb_l-xMn_xSe solid solutions with increase of manganese content.

Effective thin film heterojunctions SnO₂/Cd_0.8Zn_0.2S_0.1Se_0.9/p-CdTe/Cu were manufactured by the method of electrochemical deposition. It is shown, that not treated heterojunctions possess the sensitivity only in visible region of spectrum. At illumination by the solar simulator with W = 100 mVt/sm², not treated structures had the following photoelectric parameters: I_sc ≈ 4.76 mA/cm², 0.448 V, D* = 3 x 10⁴ cm x Hz^1/2Vt^-1. Annealing of samples in air results to substantial increase of photosensitivity is found. After TA at t = 350°C and τ = 9 min, the sensitivity of samples in the 0.8 - 1.0 μm wavelength region sharply increase, that is due to formation of films Cu₂Se at thermal annealing by means of diffusion of copper atoms from buffer contact through CdTe to Cd_0.8Zn_0.2S_0.1Se_0.9. Thus investigated structures possess following values of short circuit photocurrent, open circuit photovoltage and detectability: 1_sc = 19,4 mA/cm², U_oc = 637 mV, D* = 8 x 10⁶ cm x Hz^1/2 x Vt^-1.

In this work the results on the investigation of the photosensitivity near the IR region of the CdSe1-xTex (O less than or equal to x less than or equal to O.4) films. with thickness 0.5÷2μm, prepared on glass-ceramic substrates by precipitation from aqueous solution are presented. The temperature dependence of dark and light conductivity, spectrum of primary and impurity photoconductivity has been investigated.

The effect of an annealing at 100-110 °C on contact resistance (r_k) and adhesive strength of the contacts to Pb_1-xMn_xTe/ (In-Ag-Au) structure in the temperature range ~77-300K have been investigated. It is found out that the effect of an annealing on r_k is caused by both a diffusion of In and Ag atoms in the contact area and the volume of the crystals and the formation of an intermediate phases such as Ag₂Te.

Molecular beam epitaxy has been used for the growth of Hg_1-xCd_xTe layers (x = 0.30 - 0.34) on Si(310) substrates. The grown structures were characterized by Hall measurements for carrier density and mobility. The densities of stacking faults, threading dislocations, antiphase boundaries and macroscopic V-defects were determined by selective chemical etching. The 128 x 128 photodiode array with wavelength cut-off λ_1/2(77K) = 4.07 μm was fabricated with good photoelectric parameters.

Results of the studies of relaxation of electhcal properties of As- and Sb-doped Cd_xHg_1-xTe epitaxial layers, which were converted into n-type by ion milling (TM), are presented. It is demonstrated that donor complexes, which are formed under IM and are responsible for p-to-n conductivity type conversion, are not stable, and their concentration decreases upon storage even at the room temperature. The relaxation at room temperature results in electron concentration in converted layers decreasing from the initial value of ~(2-3)x 10¹⁵ cm right after the milling down to the value of ~l0¹⁵ cm^-3. Increasing the temperature of the storage speeds up the relaxation. The process responsible for the relaxation appeared to be the disintegration of the donor complexes, which starts after the end of the IM and is caused by the decrease in concentration of interstitial mercury atoms, generated by milling.

The dependences of electric and photoelectric parameters of the heterojunctions p-Si/Cd_0.3Zn_0.7S_0.4Se_0.6 on the thermal annealing regime are investigated. It is shown, that after thermal annealing at 400°C for τ = 6 min, a recombination rate on the interface does not almost change in a wide range of temperature. As the annealing temperature was increased from 0 to 170°C (τ= 2min), the intensity of peak in the λml = 0.593 μm wavelength region sharply increases. Upon heart treatment in air at t = 400°C for 5 ÷ 6 min, heterojunctions exhibit high photosensitivity over a wide spectral range (0.560 - 1 .38 μm). The evaluation of solar cell parameters was carried out using the dark and light current-voltage characteristics. The open circuit photovoltage and short circuit photocurrent density of HJ were V_oc = 0.564 V, J_sc= 1 8.7 mA/cm², respectively.

A CVD-technique for production of bulk ZnS_xSe_1-x with homogeneous composition has been proposed. A comparative analysis of optical and structural characteristics of zinc sulfoselenides has been carried out prior to and after hot isostatic pressure (HIP). Solid solutions of ZnS_xSe_1-x zinc chalcogenides are wide gap semiconductors applied as the materials for optoelectronics, various photoelectric and optical devices. There is an interest to their application as an operating medium of solid-state lasers and in gradient optics. The method of chemical vapor deposition (CVD) is the most promising method for production of zinc chalcogenides with simultaneously high optical and strength characteristics; however, it happens to be impossible to manufacture the samples ofZnS_xSe_1-x with homogeneous composition in the reactors used for production of ZnS and ZnSe. Due to this fact the problem of production of zinc sulfoselenides with the given constant composition by CVD method is of vital importance. The goal of our paper is the development of technique for production of bulk samples of zinc sulfoselenides with homogeneous composition by CVD method as well as the investigation of the effect of hot isostatic pressure (HIP) on structure and optical properties of ZnS_xSe_1-x.

The results of experimental research of properties of photodiode structures based on Cd_xHg_1-xTe fabricated by method of treatment of p-type material surface with indium ions with energy 1-5 keV and argon ions with energy 250 eV are introduced. By analysis of electrical and photoelectrical properties obtained structures made conclusion about more quality structure obtained by treatment with indium ions than one with argon ions. Supposed that it is related with more than two order less closes of indium ions than argon ions required to from the conversion layer.

From the point of view of its fundamental properties, solid solution Hg_1-xCd_xTe (0 less than or equal to x less than or equal to l) (MCT) is one of very attractive materials of infrared optoelectronics and has received considerable attention over the past forty odd years. In the early 90s, bulk growth of MCT was phased out for the routine production of first generation photo-conductive devices. But it is hard process to growth MCT single crystals with homogeneous composition. This fact determined a vital importance change in the MCT technology during the last decade which first at all induced by the mostly replacement of bulk growth by epitaxial technologies (LPE, MBE, VPE etc.).

The active and reactive part of C-V curve of MIS structure based on MBE HgCdTe is analyzed. It's shown, that HgCdTe - Si0₂ confine has a surface states density equal to 2.4 10¹¹ cm^-2. This value is not depended from conductivity type and graded-band gap presence. The n-CdHgTe has surface recombination as dominant mechanism.

We have considered here a functional scheme, peculiarities of operation, advantages and prospectives of using of a laser-and- holographic complex created in Federal State Unitary Enterprise "Scientific-and-Production Association "State Institute of Applied Optics' (FGUP "NPO "GIPO"). The complex is intended for technological and certification control of separate optical elements as well as objectives in infrared spectral region of 3-12 μm.

The modern systems of vision in infrared spectrum (IR) require elaboration of large-area nondefective imaging area with small pitch (less 40 μm) IR FPA. One of the directions is fabrication hybrid FPA, consisting of several of arrays of photodiodes based on MCT films (Hg_xCd_1-xTe on GaAs substrates) and readout circuits on silicon. Substitution of photodiodes array of large-area imaging area on few arrays of smaller image size, allows having the imaging area of the required size without fault pixels. The main requirement is the permanent period of photodetectors on component imaging areas. without loss of pixels on lines of gaps of the butting between arrays. Using concentrated laser radiation, for scribing the surfaces MCT film on GaAs substrate, under concrete conditions, allows to realize offered above direction. The determination of the border of zone of the influence of the laser radiation on electric characteristic of p-n junction of the MCT films and technological ways of the reduction of area of influence of the laser radiation are presented in work. We had studied the change of parameters of photodiodes on base MCT films depending on distances before laser dicing grooves and condition of the laser radiation. As source of the laser radiation we used pulsed UV laser (LGI-21) at 0,34 μm wavelength with pulse duration 7 ns, frequency of repetition 50 - 100 Hz and power in pulse 2 KW. We founded condition of the laser dicing on distances 18 - 20 μm from photodiodes, when initial current-voltage characteristics of photodiodes are saved. We designed method of the laser dicing of linear photodiodes on MCT films, and we used it to create of multichips hybrid IR FPA. The result is non damage dicing of linear photodiodes on MCT films (λ_c =12 μm) on distances 18 - 20 μm from p-n junctions.

Opportunities of application PbS and PbSe p-s for pulse radiation detection with pulses duration to 10 ns are considered. Expression for threshold stream of such detectors are obtained. Threshold stream estimation for typical values photo electrical characteristics and different light pulses duration are carried out. Frequency characteristics of the quasioptimal filters providing a maximum signal-to-noise ratio are calculated.

In the paper, an ability of determination of capture levels parameters, which are responsible for photoelectret state using relaxation curves in silver-doped cadmium telluride films have been studied.

The filtering device on the basis multiplex the Fabry-Perot interferometers and imaging spectrometer keeping this device and a matric thermal imager is offered. The calculations of parameters of this filtering device and imaging spectrometer are conducted. It is expected that the similar devices can be suitable for imagery of objects in given narrow spectral ranges.

The calculations of ultimate thresholds of receiving devices with CO₂-quantum amplifiers (RD with QA) intended for lidars and active systems of vision are conducted.