A novel method of photonic band-gap lithography of porous silicon heterostructures

Heungman Park; Alex A. Stramel; David A. Harju; Sharon M. Weiss; James H. Dickerson

doi:10.1117/12.736193

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25 September 2007 A novel method of photonic band-gap lithography of porous silicon heterostructures

Heungman Park, Alex A. Stramel, David A. Harju, Sharon M. Weiss, James H. Dickerson

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Proceedings Volume 6640, Active Photonic Crystals; 66400C (2007) https://doi.org/10.1117/12.736193
Event: NanoScience + Engineering, 2007, San Diego, California, United States

Abstract

A method to modulate the local optical properties of porous silicon photonic crystals is reported. The porous silicon photonic crystals are fabricated by electrochemical etching in a hydrofluoric acid-based electrolyte. Local oxidation was performed using either a UV lamp or 532 nm laser to irradiate selective regions of the photonic crystal. The sample was then soaked in an alcohol solution. Unmasked regions of the porous silicon photonic crystal exhibited significant spectral degradation and loss of the microcavity resonance. The region of the porous silicon photonic crystal protected by the oxide exhibited no significant changes in the reflectance spectrum. This simple photolithographic technique can be used to fabricate a variety of spatially localized silicon-based structures such as photonic bandgap mirrors, optical filters, waveguides and optical switches.

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Heungman Park, Alex A. Stramel, David A. Harju, Sharon M. Weiss, and James H. Dickerson "A novel method of photonic band-gap lithography of porous silicon heterostructures", Proc. SPIE 6640, Active Photonic Crystals, 66400C (25 September 2007); https://doi.org/10.1117/12.736193

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