MOVPE growth of quantum well GaAs/In0.10GaAs for solar cell applications

Pei-Hsuan Wu; Yan-Kuin Su; Hwen-Fen Hong; Cherng-Tsong Kuo

doi:10.1117/12.733593

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11 September 2007 MOVPE growth of quantum well GaAs/In_0.10GaAs for solar cell applications

Pei-Hsuan Wu, Yan-Kuin Su, Hwen-Fen Hong, Cherng-Tsong Kuo

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Proceedings Volume 6649, High and Low Concentration for Solar Electric Applications II; 66490E (2007) https://doi.org/10.1117/12.733593
Event: Solar Energy + Applications, 2007, San Diego, California, United States

Abstract

A Quantum Well GaAs/In_0.10GaAs single junction solar cell, with p-i-n structure, has been fabricated by metal-organic vapor-phase epitaxy (MOVPE). In this letter, we report on the study of a MQW solar cell structure with different thickness of i-layers and pairs of QWs, which was used to extend the absorption region and reduce recombination losses. The efficiency of varied design was discussed accompanying the carrier capture, carrier escape and radiative recombinations in QWs. The optimized design parameters of the solar cell structures were determined. The GaAs/InGaAs QW solar cell is proposed to extend the long-wavelength absorption, as a candidate for the next-generation high-efficiency multi-junction solar cell.

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Pei-Hsuan Wu, Yan-Kuin Su, Hwen-Fen Hong, and Cherng-Tsong Kuo "MOVPE growth of quantum well GaAs/In_0.10GaAs for solar cell applications", Proc. SPIE 6649, High and Low Concentration for Solar Electric Applications II, 66490E (11 September 2007); https://doi.org/10.1117/12.733593

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