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11 September 2007 Correlation between the photoconductivity and the nanostructure of hot-wire deposited silicon-germanium alloys analyzed by anomalous small-angle x-ray scattering
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Abstract
The nanostructure of hydrogenated amorphous silicon-germanium alloys, a-Si1-xGex:H (x=0.62 to 0.70), prepared by the hot-wire deposition technique applying different substrate and filament temperatures was analyzed by anomalous small-angle x-ray scattering experiments. For all alloys the Ge-component was found to be inhomogeneously distributed. The results from the structural and quantitative analysis have been correlated to the material photoconductivity. A clear improvement of the photoconductivity was achieved by optimizing the substrate temperature (between 130 and 360 °C) due to the reduction of hydrogen containing voids in coincidence with the formation of mass fractal structures of Ge with the fractal dimension p < 1.6 and a size of about 40 nm. The two processes cause the structural re-organization of Hydrogen from voids into Ge-fractals with enhanced Ge-H bonding, thereby improving the material photoconductivity.
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G. Goerigk and D. L. Williamson "Correlation between the photoconductivity and the nanostructure of hot-wire deposited silicon-germanium alloys analyzed by anomalous small-angle x-ray scattering", Proc. SPIE 6651, Photovoltaic Cell and Module Technologies, 66510D (11 September 2007); https://doi.org/10.1117/12.732034
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