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12 September 2007 Mesophase semiconductors and the field effect transistors
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Abstract
Here we show the simple fabrication of field effect transistor (FET) with a mesophase semiconductor, a derivative of dithienyl naphthalene, which exhibits a fast mobility (10-1 ~ 10-2 cm2 V-1 s-1) of charged carriers in the mesophase. The compound is a mesogen, but with highly ordered layered structure in a triclinic lattice, meaning a 3D-mesophase is formed. The device performance was studied for the transistor mobility, on/off ratio and threshold voltage of device operation, to have 0.14 cm2 V-1 s-1, 2 x 103 and -27 V at room temperature (in a crystal phase), respectively, even though the thin film active layer (100 nm thick) does have a multi-domain system. However, the XRD studies indicate the uniformly aligned molecules in each domain, of which long axis is inclined to be ca. 27° against the axis perpendicular to the substrate plane. This implies that a self-assembling nature of mesogenic molecules is a certain merit for thin film device fabrication in organic electronics.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Shimizu, K. Oikawa, K. Nakayama, H. Monobe, T. Kimoto, K. Tsuchiya, B. Heinrich, D. Guillon, and M. Yokoyama "Mesophase semiconductors and the field effect transistors", Proc. SPIE 6654, Liquid Crystals XI, 66540I (12 September 2007); https://doi.org/10.1117/12.734910
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