Dielectric interface modification by UV irradiation: a novel method to control OFET charge carrier transport properties

Niels Benson; Martin Schidleja; Christopher Siol; Christian Melzer; Heinz von Seggern

doi:10.1117/12.733646

13 September 2007 Dielectric interface modification by UV irradiation: a novel method to control OFET charge carrier transport properties

Niels Benson, Martin Schidleja, Christopher Siol, Christian Melzer, Heinz von Seggern

Author Affiliations +

Proceedings Volume 6658, Organic Field-Effect Transistors VI; 66580W (2007) https://doi.org/10.1117/12.733646
Event: Photonic Devices + Applications, 2007, San Diego, California, United States

Abstract

The charge carrier transport in organic field effect transistors (OFETs) is determined by the transport properties of the insulator / organic semiconductor interface. We demonstrate that an adequate treatment of this interface results in a polarity change of the OFET charge carrier transport properties, without further altering the device structure. Illuminating the utilized PMMA polymer dielectric, by using UV radiation, leads to the introduction of mainly electron traps at the dielectric interface. This results in the suppression of the electron transport for an otherwise n-type pentacene OFET. However, as a consequence of trapped electrons in the near surface layer of the PMMA dielectric, the hole transport of the device is enabled though a hole blocking source/drain metallization. This effect, as well as the impact of the UV irradiation on the PMMA dielectric will be discussed in detail. The UV treatment yields a PMMA interface rich on polar groups. The influence of these groups on the OFET characteristics is investigated by studying several polymer dielectrics with varying content of the emerging groups.

Citation Download Citation

Niels Benson, Martin Schidleja, Christopher Siol, Christian Melzer, and Heinz von Seggern "Dielectric interface modification by UV irradiation: a novel method to control OFET charge carrier transport properties", Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66580W (13 September 2007); https://doi.org/10.1117/12.733646

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available