Paper
13 September 2007 Organic field-effect transistors with solution-processible thiophene/phenylene based-oligomer derivative films
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Abstract
Solution-processible thiophene/phenylene -based oligomer derivatives with different end substituents are presented as p-type semiconducting materials in OFETs. These films were deposited on OTS-treated SiO2/Si or polymeric bivinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB)/ITO/quartz substrates, via drop-casting and spin-casting. Synchrotron-based grazing-incidence X-ray diffraction and atomic force microscopy reveals that both drop- and spin-cast films have highly crystalline structures with edge-on molecules and parallel π-π stacking conjugated planes with respect to the substrate. In particular, temperature-dependent solubility of these materials can give a strategy for highly ordered crystalline structure in spin-cast films grown on cooler substrates, when compared to warmed solutions. Field-effect mobilities of these spin-cast films in a top-contacted electrode OFETs with BCB dielectrics are reached as high as ~0.01 cm2/Vs.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hoichang Yang, Jason Locklin, Birendra Singh, and Zhenan Bao "Organic field-effect transistors with solution-processible thiophene/phenylene based-oligomer derivative films", Proc. SPIE 6658, Organic Field-Effect Transistors VI, 66581A (13 September 2007); https://doi.org/10.1117/12.733953
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KEYWORDS
Crystals

Dielectrics

Field effect transistors

Electrodes

Gold

Transistors

Molecules

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