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12 September 2007 CMOS pixel structures optimised for scientific imaging applications
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Abstract
In this paper we present the results from a pilot project at e2v technologies to examine the performance of CMOS Active Pixel Sensors for scientific applications. We describe the characterisation of two prototype 128 × 128 pixel imaging devices with scanning circuitry, as well as 5 × 5 pixel test structures with further variation in pixel design. The main variation in the design is the type of photodiode. In this process two types of diode were available, a 'shallow' n+/p-well diode and 'deep' n-well/p-substrate diode. The characterisation includes the use of photon transfer curves to measure output responsivity and we quantify dark signal variations between pixel structures and reset noise levels. A source of additional dark signal is found to be light emission from the in-pixel transistors. We also present results from an optical characterisation of the stand alone devices, including QE response, MTF and PSF measurements. Finally we outline the considerations to produce such a device using a more advanced process with a smaller feature size.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Greig, Andrew Holland, David Burt, and Andrew Pike "CMOS pixel structures optimised for scientific imaging applications", Proc. SPIE 6660, Infrared Systems and Photoelectronic Technology II, 66600T (12 September 2007); https://doi.org/10.1117/12.731407
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