Paper
12 September 2007 Radiation-hard, charge-coupled devices for the extreme ultraviolet variability experiment
Author Affiliations +
Abstract
The Extreme-Ultraviolet Variability Experiment (EVE) is a component of NASA's Solar Dynamics Observatory (SDO) satellite, aimed at measuring the solar extreme ultraviolet (EUV) irradiance with high spectral resolution, temporal cadence, accuracy, and precision. The required high EUV quantum efficiency (QE), coupled with the radiation dose to be experienced by the detectors during the five year mission (~1 Mrad), posed a serious challenge to the charge-coupled device (CCD) detectors. MIT Lincoln Laboratory developed the 2048 × 1024 pixel CCDs and integrated them into the detector system. The devices were back-side thinned and then back surface passivated using a thin, heavily boron-doped silicon layer grown by molecular beam epitaxy (MBE) at less than 450°C. Radiation-hardness testing was performed using the Brookhaven National Laboratory's National Synchrotron Light Source (BNL/NSLS). The MBE-passivated devices were compared against devices with back surfaces passivated with a silver charge chemisorption process and an ion-implant/furnace anneal process. The MBE devices provided both the highest QE at the required (-100°C) operating temperatures, and superior radiation hardness, exceeding the goals for the project. Several flight-ready devices were delivered with the detector system for integration with the satellite.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard C. Westhoff, Micheal K. Rose, James A. Gregory, Gregory D. Berthiaume, John F. Seely, Thomas N. Woods, and Gregory Ucker "Radiation-hard, charge-coupled devices for the extreme ultraviolet variability experiment", Proc. SPIE 6686, UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XV, 668604 (12 September 2007); https://doi.org/10.1117/12.734371
Lens.org Logo
CITATIONS
Cited by 10 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum efficiency

Charge-coupled devices

Extreme ultraviolet

Imaging systems

Silicon

Oxides

Image processing

RELATED CONTENT

EUV Astronomical Spectroscopy With CCD Detectors
Proceedings of SPIE (October 13 1986)
Flash Technology for CCD Imaging in the UV
Proceedings of SPIE (December 10 1986)
Indium-tin-oxide biased-gate technology
Proceedings of SPIE (August 12 1992)
New UV detectors for solar observations
Proceedings of SPIE (February 11 2003)
The CCD Flash Gate
Proceedings of SPIE (October 13 1986)

Back to Top