GaSe and GaTe anisotropic layered semiconductors for radiation detectors

Krishna C. Mandal; Michael Choi; Sung Hoon Kang; R. David Rauh; Jiuan Wei; Hui Zhang; Lili Zheng; Y. Cui; M. Groza; A. Burger

doi:10.1117/12.739399

21 September 2007 GaSe and GaTe anisotropic layered semiconductors for radiation detectors

Krishna C. Mandal, Michael Choi, Sung Hoon Kang, R. David Rauh, Jiuan Wei, Hui Zhang, Lili Zheng, Y. Cui, M. Groza, A. Burger

Author Affiliations +

Proceedings Volume 6706, Hard X-Ray and Gamma-Ray Detector Physics IX; 67060E (2007) https://doi.org/10.1117/12.739399
Event: Optical Engineering + Applications, 2007, San Diego, California, United States

Abstract

High quality detector grade GaSe and GaTe single crystals have been grown by a modified vertical Bridgman technique using high purity Ga (7N) and in-house zone refined (ZR) precursor materials (Se and Te). A state-of-the-art computer model, MASTRAPP, is used to model heat and mass transfer in the Bridgman growth system and to predict the stress distribution in the as-grown crystals. The model accounts for heat transfer in the multiphase system, convection in the melt, and interface dynamics. The crystals harvested from ingots of 8-10 cm length and 2.5 cm diameter, have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, low temperature photoluminescence (PL), atomic force microscopy (AFM), and optical absorption/transmission measurements. Single element devices up to 1 cm² in area have been fabricated from the crystals and tested as radiation detectors by measuring current-voltage (I-V) characteristics and pulse height spectra using ²⁴¹Am source. The crystals have shown high promise as nuclear detectors with their high dark resistivity (≥10⁹ Ω^.cm), good charge transport properties (μτ_e ~ 1.4x10^-5 cm²/V and μτ_h ~ 1.5x10^-5 cm²/V), and relatively good energy resolution (~4% energy resolution at 60 keV). Details of numerical modeling and simulation, detector fabrication, and testing using a ²⁴¹Am energy source (60 keV) is presented in this paper.

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Krishna C. Mandal, Michael Choi, Sung Hoon Kang, R. David Rauh, Jiuan Wei, Hui Zhang, Lili Zheng, Y. Cui, M. Groza, and A. Burger "GaSe and GaTe anisotropic layered semiconductors for radiation detectors", Proc. SPIE 6706, Hard X-Ray and Gamma-Ray Detector Physics IX, 67060E (21 September 2007); https://doi.org/10.1117/12.739399

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