CZT X-ray detectors obtained by the boron encapsulated vertical Bridgman method

M. Pavesi; M. Zanichelli; E. Gombia; R. Mosca; L. Marchini; M. Zha; A. Zappettini; E. Caroli; N. Auricchio; B. Negri

doi:10.1117/12.734017

21 September 2007 CZT X-ray detectors obtained by the boron encapsulated vertical Bridgman method

M. Pavesi, M. Zanichelli, E. Gombia, R. Mosca, L. Marchini, M. Zha, A. Zappettini, E. Caroli, N. Auricchio, B. Negri

Proceedings Volume 6706, Hard X-Ray and Gamma-Ray Detector Physics IX; 67060X (2007) https://doi.org/10.1117/12.734017
Event: Optical Engineering + Applications, 2007, San Diego, California, United States

Abstract

Recently, some of the authors showed that it is possible to grow CZT crystals by the boron oxide encapsulated vertical Bridgman method. The most important feature of the technique is that the crystal, during the growth, is fully encapsulated by a thin layer of liquid boron oxide, so that the crystal-crucible contact is prevented. The stress of the crucible to the crystal is strongly reduced also during the cooling, because the boron oxide layer is molten down to about 500°C. A number of detectors have been prepared out of these crystals. The transport properties (μτ product) have been studied by photoconductivity measurements as well as by determining the response to hard X-ray irradiation. The transport properties have been studied as a function of the indium content and of the position of the wafer which the detector was cut out.

Citation Download Citation

M. Pavesi, M. Zanichelli, E. Gombia, R. Mosca, L. Marchini, M. Zha, A. Zappettini, E. Caroli, N. Auricchio, and B. Negri "CZT X-ray detectors obtained by the boron encapsulated vertical Bridgman method", Proc. SPIE 6706, Hard X-Ray and Gamma-Ray Detector Physics IX, 67060X (21 September 2007); https://doi.org/10.1117/12.734017

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