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14 November 2007 Dynamics analysis of photoelectron decay in cubic AgCl microcrystals by sulfur sensitization
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Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 67223H (2007) https://doi.org/10.1117/12.783539
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
The decay curve of free photoelectron in cubic AgCl microcrystals by sulfur sensitization is obtained by microwave absorption dielectric spectrum detection technique. By comparing the free photoelectron decay curves of unsensitized and sensitized sample, we discover that sulfur sensitization centers act as shallow electron trap when sensitization time is 45min. In order to analyze the characteristics of sulfur sensitization center quantitatively, the method of the decay kinetics of photoelectron is used in this paper. We first proposed a model of sulfur-sensitized AgCl microcrystals, and then induced a series of kinetics equation. The characteristics curve of photoelectron decay is obtained by solving the kinetics equation, which is in agreement with the experimental curve. Meanwhile the concentration, trap depth and capture cross-section are obtained by computer simulation, which are 1.12ppm, 0.085eV and 1.46×10-18cm, respectively. Also a possible method to study the mechanism of sulfur sensitization from the perspective of dynamics is suggested.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaowei Li, Yanxia Hu, Rongxiang Zhang, Jixian Zhang, Guoyi Dong, Shaopeng Yang, and Guangsheng Fu "Dynamics analysis of photoelectron decay in cubic AgCl microcrystals by sulfur sensitization", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67223H (14 November 2007); https://doi.org/10.1117/12.783539
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