Accurate lithography analysis for yield prediction

Greg Yeric; Babak Hatamian; Rahul Kapoor

doi:10.1117/12.746797

30 October 2007 Accurate lithography analysis for yield prediction

Greg Yeric, Babak Hatamian, Rahul Kapoor

Proceedings Volume 6730, Photomask Technology 2007; 67300S (2007) https://doi.org/10.1117/12.746797
Event: SPIE Photomask Technology, 2007, Monterey, California, United States

Abstract

New DFM tools appearing on the market hold a promise of assessing parametric and functional yield loss due to lithography effects. The accuracy of underlying models can limit the veracity of such assessment. For example, many lithography steps used in the fab are extremely nonlinear and might exhibit significant differences from models used by the DFM tools. Furthermore, inputs used in calibrating a model can limit its accuracy, and most organizations are challenged to characterize the exact needs of a lithography model at a statistically relevant sampling size. After discussing potential sources of inaccuracy in modeling, the paper will describe a methodology for modeling and yield prediction based on such accurate modeling.

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Greg Yeric, Babak Hatamian, and Rahul Kapoor "Accurate lithography analysis for yield prediction", Proc. SPIE 6730, Photomask Technology 2007, 67300S (30 October 2007); https://doi.org/10.1117/12.746797

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KEYWORDS

Optical proximity correction

Lithography

Calibration

Data modeling

Design for manufacturing

Photomasks

Process modeling

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